APTGT200SK170D3G

Transistors - IGBTs - Modules

APTGT200/SK170D3G is a module series of insulated gate bipolar transistors (IGBTs). It is a type of semiconductor transistor that combines on one die both the high input impedance and voltage gain of a metal oxide field effect transistor (MOSFET) and the low on-state saturation voltage of a bipolar junction transistor (BJT).

Application Field

This IGBT module from APTGT200/SK170D3G is available in a 200 Amp 600 Volt, 180 Amp 1200 Volt & 135 Amp 1700 Volt package and is JEDEC Standard is TO-247. It is most commonly used in applications such as welding, motor control, UPS power, motor drive, and Solar energy. The IGBT module is also suitable for use in fast swtiching, general purpose and industrial power conversion for traction, voltage - source and many more applications.

Working Principle

The IGBT module from APTGT200/SK170D3G utilizes a patented termination and embrittlement technology. The working principle begins by the electrical field causes hot charge carriers to generate from the collector-base junction into the base region and which later recombines with the oppositely charged carriers to form an avalanche spark gap that provides for high avalanche breakdown voltage rating. In consequence, the module is able to ensure a low turn-on and turn-off time as well as a low power-loss.

The IGBT module has a very efficient structure as it incorporates a fully rated schottky free-wheeling diode with a low switching and turn-off loss,t is able to provide high current carrying capability over a wide range of temperature between -40°C to 150°C. Moreover, ithas a long cavity creepage distances, that makes the module appropriate for applications with high safety requirements. Besides, compared to other semiconductor devices, this IGBT module exhibits a high voltage stability and a low drop across the device.