
Allicdata Part #: | APTGT200SK60T3AG-ND |
Manufacturer Part#: |
APTGT200SK60T3AG |
Price: | $ 34.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOD IGBT 600V 290A SP3 |
More Detail: | IGBT Module Trench Field Stop Single 600V 290A 750... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 30.97210 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 290A |
Power - Max: | 750W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 200A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 12.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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Transistors are an integral part of modern electronics and are used in a wide variety of applications. The APTGT200SK60T3AG is one such transistor module that has been developed for use in applications where a high switching speed and a high degree of efficiency are needed. This article will discuss the application field of the APTGT200SK60T3AG and its working principle.
APTGT200SK60T3AG Application Field
The APTGT200SK60T3AG is a three phase insulated-gate bipolar transistor (IGBT) module, which is suitable for high frequency, low and medium voltage applications. It is designed to provide both high speed switching and high efficiency and is mainly used for motor control, power control and inverter applications. It can also be used in other systems where fast switching speeds and a high degree of efficiency are needed, such as solar energy systems and domestic appliances.
The APTGT200SK60T3AG provides good thermal performance, with its maximum junction temperature rating of 125°C and a gate drive voltage between 10 and 15V. It also offers a high switching speeds of up to 150kHz and high voltage ratings of up to 600V. Its low gate drive threshold voltage ensures that the module can remain energized even when the voltage drops below its normal operating range.
APTGT200SK60T3AG Working Principle
The APTGT200SK60T3AG module is composed of three IGBTs, which can be used in parallel or independently for three-phase applications. It works with a gate drive, which is connected to the gate junction of each of the three IGBTs. The gate drive supplies current to the gate junction and generates a voltage, which causes the gate junction to open and close. This process allows the module to switch between two states, “On” or “Off”, depending on the current level supplied to the gate junction.
In operation, the gate drive creates a voltage across the gate junction which creates a voltage drop across the drain of the IGBT. This causes the electrons to move through the IGBT and its collector junction, in a process known as the switching effect. When this occurs, the IGBT turns on and the current will flow in either the forward or reverse direction. The current flowing through the IGBT is then used to control the switching speed of the module.
The APTGT200SK60T3AG module can be used to construct either a voltage driven or current driven application. The module provides both high speed switching and high efficiency for applications that require it. It has a high thermal performance, with a junction temperate rating of 125°C and a gate drive voltage between 10 and 15V, making it ideal for applications where high speed switching and a high degree of efficiency are needed.
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