Allicdata Part #: | APTGT225A170G-ND |
Manufacturer Part#: |
APTGT225A170G |
Price: | $ 99.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE TRENCH PHASE LEG SP6 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 34... |
DataSheet: | APTGT225A170G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 90.74730 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 340A |
Power - Max: | 1250W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 225A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 20nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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Transistors - IGBTs - Modules
The APTGT225A170G is an Insulated Gate Bipolar Transistor (IGBT) module designed for medium and high power applications. It is designed for use in a variety of motor control, inverter, and power conversion circuits. Its low noise, low on-resistance, and low switching losses make it an attractive choice for medium and high power applications.The APTGT225A170G is a thyristor-type module, which means that it is composed of four “layers” of components. The first layer is the metal-oxide semiconductor (MOS) transistor, which has two terminals: the “gate” and the “drain”. The MOS transistor serves as the switching element of the circuit, controlling the flow of current between the gate and the drain. The second layer is the insulated gate bipolar transistor (IGBT), which serves as the active device that generates the voltage and current needed to switch the MOS transistor. The third layer is the gate driver, which controls the switching of the IGBT. The last layer is the heat sink, which provides thermal management for the module.The APTGT225A170G has a maximum current rating of 225A and a maximum voltage of 1700V. It is designed for use in a variety of motor control applications, such as brushless DC motors, DC motor drives, AC motor drives, and servomotors. It can also be used for power conversion applications such as inverters, switched mode power supplies, and rectifiers.The APTGT225A170G’s working principles are based on several key features. The first is its gate-gate insulation layer, which provides an isolated environment between the MOS and IGBT components, allowing current to flow freely between them while blocking any electrical interference. This insulation layer also limits the amount of electromagnetic interference the device can generate.The APTGT225A170G also features a low-ripple current technology, which allows it to operate at high switching speeds with minimal switching losses. This technology works by reducing the amount of current ripple during the switching process, resulting in improved system efficiency and power dissipation.The APTGT225A170G also has a low on-resistance, which reduces power dissipation and switching losses. Additionally, the module has a low noise level, which is important for motor control applications where unwanted noise must be minimized. Finally, the module has a high switching speed, which reduces switching losses and increases overall system performance.Overall, the APTGT225A170G is a reliable, efficient, and versatile module that can be used in a variety of medium and high power applications. Its low on-resistance, low noise level, and fast switching speed make it an ideal choice for motor control, inverter, and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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