APTGT225SK170G

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Transistors - IGBTs - Modules

APTGT225SK170G is a bipolar module with a special gate circuit developed by Schottky Electronics and widely used in industrial applications due to its advantages compared to more conventional MOSFETs.

This IGBT module is designed with a high degree of integration, which allows for increased system reliability, reduced cost and size and better power dissipation. It is a wide-bandgap, two-terminal device with several distinct advantages over traditional silicon-based MOSFETs, such as lower gate drive requirements and improved efficiency. Most notably, it allows for higher switching frequencies than standard silicon-based solutions.

The APTGT225SK170G module has a maximum blocking voltage capability of 1200 volts and a maximum switching frequency of 20kHz at a nominal operating temperature of 25°C and 17.5kV/Us maximum turn-on time. It offers a 350dB typical common-mode transient immunity performance, which is twice the performance of conventional MOSFETs.

This module is an ideal choice for high power industrial and automotive applications, such as motor drives, power converters and renewable energy systems. It is also suitable for applications where low power dissipation is needed, such as Lighting and White Goods. The module is designed to work in a wide temperature range of -40°C to +125°C.

Working Principle

The basic operating principle of APTGT225SK170G is based on the transistor action of an insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal power semiconductor device, where a voltage applied to the gate terminal can control the conductivity of the device. IGBTs are typically made from two different types of materials, a p-type and an n-type, that create two different layers which form a barrier between the gate terminal and the main current passing between the two other terminals.

When a positive voltage is applied to the gate of the IGBT, the p-type material will allow electrons to flow from the gate terminal to the n-type material, creating a large electric field which in turn causes the electrons to leave their pockets in favor of the new charge. This process then creates a large enough electric field to overcome the barrier created between the two terminals, allowing current to flow through the device.

The APTGT225SK170G module consists of several IGBTs arranged in parallel and wired in series, which allows high current switching capability with a low voltage drop in the semiconductor. This also helps to improve the efficiency of the device as it reduces switching losses due to lower gate charge requirements.

In conclusion, APTGT225SK170G is a highly efficient, cost-effective and robust solution for many applications such as Automotive, Industrial and Renewable Energy. The module\'s higher switching frequency, reduced gate drive requirements and increased current carrying capabilities make it a great choice for these types of applications.

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