APTGT300A120G Allicdata Electronics
Allicdata Part #:

APTGT300A120G-ND

Manufacturer Part#:

APTGT300A120G

Price: $ 92.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE TRENCH PHASE LEG SP6
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 42...
DataSheet: APTGT300A120G datasheetAPTGT300A120G Datasheet/PDF
Quantity: 1000
100 +: $ 84.38990
Stock 1000Can Ship Immediately
$ 92.83
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 420A
Power - Max: 1380W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 21nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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APTGT300A120G Application Field and Working Principle

Introduction

APTGT300A120G is an Insulated-Gate Bipolar Transistor (IGBT) from Toshiba. This IGBT is suitable for applications requiring an extremely low gate operating current as well as low saturation voltage. This IGBT module is constructed of two IGBTs in a single housing with their isolated bases connected in series or parallel. As a result, the rated current is double the rated current of each transistor. This IGBT module is part of Toshiba\'s APT series which was designed for use in high power switching and industrial motor control applications, including AC and DC drives, welding machines, elevators, etc.

Features of APTGT300A120G

This IGBT module offers several features that make it suitable for many applications. First, it has a maximum gate current of only 1 μA and a short recovery time. The short recovery time enables fast switching and thus supports applications with high switching speeds such as motor control drives and welding equipment. Second, it has a low on-state voltage drop of 1.9 V, which helps minimize power losses in applications where high currents are required. Third, this module has a temperature operating range from -40°C to +125°C. This allows it to be used in harsh operating environments.

Applications of APTGT300A120G

APTGT300A120G is suitable for applications requiring low gate operating current, low saturation voltage and high switching speeds. Its low on-state voltage drop makes it suitable for power circuits such as AC and DC drives, welding machines, industrial machinery and elevators. Due to its temperature range, it is also suitable for high temperature applications such as air conditioners and cooling equipment.

Working Principle of APTGT300A120G

APTGT300A120G is an Insulated-Gate Bipolar Transistor (IGBT). It works by using a gate voltage to control a base current, which in turn controls a collector current. The base current is used to control the amount of current flowing between the collector and emitter of the transistor. When a voltage is applied to the gate of the transistor, it creates a field that moves electrons from the emitter to the collector. This creates a channel for the collector current to flow. The collector current is determined by the amount of gate voltage applied and the amount of current flowing through the base.

Conclusion

APTGT300A120G is a high power electronic switching device which is highly suitable for applications requiring an extremely low gate operating current as well as low saturation voltage. It has a maximum gate current of 1 μA and a low on-state voltage drop of 1.9 V. The wide temperature range allows it to be used in harsh environments such as cooling equipment. Its working principle is based on using a gate voltage to control a base current which in turn controls the collector current. This makes it suitable for applications such as AC and DC drives, welders, elevators and industrial machines.

The specific data is subject to PDF, and the above content is for reference

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