APTGT300A60D3G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	400A
Power - Max:	940W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 300A
Current - Collector Cutoff (Max):	500µA
Input Capacitance (Cies) @ Vce:	18.5nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	D-3 Module
Supplier Device Package:	D3

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APTGT300A60D3G Application Field and Working Principle

Transistors - IGBTs - Modules

The APTGT300A60D3G is a three-phase insulated-gate bipolar transistor (IGBT) module, designed to provide high switching power, low switching losses, high insulation rating, and excellent dynamic characteristics. It is designed to be used in traction and industrial applications, such as power generators, UPS systems and electric motors.The APTGT300A60D3G module is composed of three IGBTs combined into a single package. Each IGBT is housed in a separate and isolated silicon substrate, allowing higher voltage blocking capability, better switching efficiency, and reduced thermal stress on the active components. The design is optimized for high-power turn-on and switching applications and can tolerate high-frequency alternate current (AC) voltages.The APTGT300A60D3G is a three-phase module based on high-reliability IGBTs, but it can also be used as an individual IGBT for single-phase applications. The module has an integrated three-phase bridge rectifier to allow for a full-bridge topology or individual use.The working principle of the APTGT300A60D3G is based on the “cross-over” of two transistors. The current flow path starts with an n-type source region in the lower transistor which injects electrons into the transistor. As the current starts to flow, the electrons enter the emitter and are replaced with holes. The holes then cross over to the collector in the upper transistor and the current is collected. Since the current travels through both transistors, the emitter voltage drops and the collector voltage rises.The APTGT300A60D3G is designed to switch very quickly and to have a high on/off ratio. It has a fast turn-on time of 45ns and a turn-off time of 55ns. It also has a high peak current of 375A, which makes it ideal for high power applications.The APTGT300A60D3G also features active clamping for its bidirectional current flow, allowing for greater control over the current flow. This active clamping helps to reduce EMI interference and makes the module suitable for high-speed, high-current applications.The APTGT300A60D3G has an isolation voltage of 3.2kV, which makes it safe to use in high-voltage applications. In addition, it has an attractive total cost compared to other IGBT modules.In summary, the APTGT300A60D3G is an IGBT module designed for applications that require higher switching power, low switching losses, and excellent dynamic characteristics. It features high-reliability IGBTs, fast turn-on and turn-off times, high peak current, and active clamping for bidirectional current flow. It also features an excellent isolation voltage of 3.2kV, making it suitable for high-voltage applications. Lastly, it has an attractive total cost compared to other IGBT modules.

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