Allicdata Part #: | APTGT300A60G-ND |
Manufacturer Part#: |
APTGT300A60G |
Price: | $ 69.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE TRENCH PHASE LEG SP6 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 600V 430... |
DataSheet: | APTGT300A60G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 63.25330 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 430A |
Power - Max: | 1150W |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 300A |
Current - Collector Cutoff (Max): | 350µA |
Input Capacitance (Cies) @ Vce: | 24nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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Application Field and Working Principle of APTGT300A60G IGBT Modules
IGBT modules are a type of power transistors developed for use in high voltage, high frequency applications. The APTGT300A60G IGBT module is a general-purpose high power device that can be used in a variety of applications ranging from DC motor controls to digital signal processing and telecommunications. This article provides an overview of the features and benefits of the APTGT300A60G IGBT module and its application field and working principle.
Features and Benefits
The APTGT300A60G IGBT module is a general-purpose device that is designed to be used in a wide variety of applications. This module has a wide range of features and benefits that make it an attractive choice for many applications. The module is rated for a maximum collector current of 300A and can operate at voltage ratings up to 600V. The device is a fast-switching device that can handle frequencies up to 10KHz, making it suitable for high-frequency applications. Furthermore, it is a fully modular device, meaning that it can be used in combination with other IGBT modules to create a customized power stage solution.
The APTGT300A60G IGBT module also features a low forward voltage, meaning that less power is dissipated when the device is switched on. This is particularly useful when the device is used in power applications as it helps reduce power losses. Furthermore, the module also features a high overload current capability, allowing it to handle high current applications without damage. Finally, the module is designed with a heat sink and has built-in cooling to help reduce its thermal dissipation and maintain a stable operating temperature.
Application Field
The APTGT300A60G IGBT module can be used in a wide variety of applications, such as in the automotive industry for motor controls, in the telecommunications industry for digital signal processing, and in the building control industry for light dimming and energy saving applications. The device can also be used in power conversion applications, such as in a solar inverter, to convert the energy from the solar panel into a usable form of electricity. The module is also suitable for use in industrial and military applications where high power and high frequencies are required.
Working Principle
The APTGT300A60G IGBT module works on the principle of the insulated-gate bipolar transistor (IGBT). The module consists of two transistors, an n-channel and a p-channel, that are connected in parallel. The n-channel transistor acts as a switch, while the p-channel transistor controls the current flow. The device is triggered by a base voltage, which is applied to the IGBT\'s gate. This voltage causes the n-channel transistor to turn on, allowing current to flow from the source to the drain. Depending on the voltage applied to the gate, current can either be switched on or off. The APTGT300A60G IGBT module has a built-in diode that helps reduce power losses due to reverse current flow.
Conclusion
The APTGT300A60G IGBT module offers a wide range of features and benefits that make it an attractive choice for many applications. The device is suitable for use in the automotive, telecommunications, building control, power conversion and industrial applications. The IGBT module works on the principle of the insulated-gate bipolar transistor and consists of two transistors connected in parallel. Finally, the device features a low forward voltage, a high overload current capability, and a built-in diode for reduced power losses.
The specific data is subject to PDF, and the above content is for reference
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