APTGT30H60T1G Allicdata Electronics
Allicdata Part #:

APTGT30H60T1G-ND

Manufacturer Part#:

APTGT30H60T1G

Price: $ 21.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH FULL BRIDGE SP1
More Detail: IGBT Module Trench Field Stop Full Bridge Inverter...
DataSheet: APTGT30H60T1G datasheetAPTGT30H60T1G Datasheet/PDF
Quantity: 1000
100 +: $ 19.50930
Stock 1000Can Ship Immediately
$ 21.46
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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IGBT modules are developed to control and convert electrical power in industrial applications. Typically in both high-power and low-power devices. The general purpose of IGBTs is to utilize several switches or transistors in order to improve the power conversion efficiency, reduce components size and cost. The APTGT30H60T1G is an example of a high voltage and high power insulated-gate bipolar transistor module.

Application Field
The APTGT30H60T1G is designed for a wide range of industrial applications. These include motor drives, servo control, UPS systems, power transmission, welding machines, grid-tied solar inverters and traction motors. Its robust internal insulation makes it best suited for high voltage switching applications. It can be used in heavy industry as well as consumer electronics. Its versatile characteristics make it quite a popular choice for any kind of application requiring high voltage and power switching.

Working Principle
The basic operating principle behind the APTGT30H60T1G is insulated-gate bipolar transistor (IGBT) technology. This is a type of field-effect transistor (FET) that utilizes both bipolar or MOS transistors integrated on the same chip. The integration of both technologies enables the further improvement of power conversion efficiency, switching speed and reliability. An insulated gate allows either a positive or a negative current to pass, thus allowing both manual and automatic regulation of the output voltage and current. The module is designed with a low on-resistance rating, allowing the device to handle large currents while the internal insulation ensures a very low leakage current.

The APTGT30H60T1G module is capable of operating at very high temperatures, making it suitable for extreme applications. Its low on-resistance and short circuit rating, however, makes it best suited for medium-power applications. The module is equipped with reverse conduction protection, making it more reliable even under adverse conditions. In addition, the device is designed to consume less power during operation, thus reducing the overall power consumption and cost.

IGBT modules are an indispensable part of many industrial applications. The APTGT30H60T1G is a high voltage and high power IGBT module, designed for an array of applications, ranging from motor drives to welding machines. Its integration of FET technology and bipolar transistors allows the device to exhibit superior power conversion efficiency and switching capability, ensuring reliability even under extreme conditions. The APTGT30H60T1G is thus an excellent choice for medium-power applications.

The specific data is subject to PDF, and the above content is for reference

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