APTGT35A120D1G Allicdata Electronics
Allicdata Part #:

APTGT35A120D1G-ND

Manufacturer Part#:

APTGT35A120D1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH PHASE LEG D1
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 55...
DataSheet: APTGT35A120D1G datasheetAPTGT35A120D1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 55A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Description

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APTGT35A120D1G is a device belonging to the Transistors - IGBTs - Modules category. This device is an IGBT Module (Insulated Gate Bipolar Transistor Module). It is made up of a large number of individual IGBTs which have been interconnected in series, parallel and/or anti-parallel configurations depending on the design of the module.

The APTGT35A120D1G module is designed for high-power applications. Its maximum current rating is 35A and its maximum DC voltage rating is 1200V. Therefore, it can be used for projects that require large currents and low on-state voltage drops. It is equipped with a voltage clamp composed of a diode connected in antiparallel with the IGBT.

The working principle of the APTGT35A120D1G module is based on the principle of an IGBT. This type of transistor has two essential parts: the emitter and the collector. The emitter is connected to the negative terminal of the power source and the collector to the load. When the base current is applied through the gate, holes and electrons are injected into the depletion region between the emitter and collector. This causes the electric field between the emitter and collector to be reversed and the Region of Operation (ROD) to reduce. In turn, the current through the emitter and collector flow increases, boosting voltage gain.

Due to its widely varying characteristics, the APTGT35A120D1G module is widely used in various applications. Being an IGBT module, it is primarily used in high voltage power circuits such as those found in motor drives, solar inverters, and electricity transmission. It is also used in applications such as electric power steering, audio power amplifiers, and light dimmers. In addition, due to its high voltage rating and low on-state voltage drop, it is suitable for applications where heavy loads need to be driven.

The APTGT35A120D1G module is also widely used in power distribution systems. Here, it is used as a switching element to control the flow of electric current. The device\'s low on-state resistance makes it ideal for switching applications, where the switching frequency is high and the current rating is large. Moreover, due to its high voltage rating, it is suitable for power circuits in an industrial environment.

In summary, the APTGT35A120D1G belongs to the Transistors – IGBTs – Modules category. It has a maximum current rating of 35A and a maximum DC voltage rating of 1200V, which makes it suitable for high power applications. The device also has a low on-state voltage drop, which makes it suitable for applications where heavy loads need to be driven. Its applications include motor drives, solar inverters, electricity transmission, and power distribution systems, among others.

The specific data is subject to PDF, and the above content is for reference

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