APTGT400U120D4G Allicdata Electronics
Allicdata Part #:

APTGT400U120D4G-ND

Manufacturer Part#:

APTGT400U120D4G

Price: $ 74.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 600A 2250W D4
More Detail: IGBT Module Trench Field Stop Single 1200V 600A 22...
DataSheet: APTGT400U120D4G datasheetAPTGT400U120D4G Datasheet/PDF
Quantity: 1000
100 +: $ 68.09920
Stock 1000Can Ship Immediately
$ 74.91
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 600A
Power - Max: 2250W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
Current - Collector Cutoff (Max): 8mA
Input Capacitance (Cies) @ Vce: 28nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D4
Supplier Device Package: D4
Description

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APTGT400U120D4G is a high-performance, ultra-high-speed IGBT module designed for high-reliability, high-efficiency, high-density applications. It is a high current / high power semiconductor device combining high-frequency power MOSFETs, low-power IGBTs and associated high-speed drivers and diodes. In particular, APTGT400U120D4G combines the high power and speed of IGBTs with the low loss and soft switching characteristics of MOSFETs.

APTGT400U120D4G has several application fields, most notably in power supplies, motors and lighting, especially in high-speed switching, where the excellent switching capability makes it very suitable for high switching frequencies. APTGT400U120D4G can also be used for phase control and pulse-width modulation (PWM) applications, such as in motor drives and LED lighting.

The working principle of APTGT400U120D4G is based on the combined operation of a number of IGBTs and MOSFETs in a package, with the IGBTs operating as the main switching element and the MOSFETs acting as the auxiliary switch elements. The IGBTs are usually connected in an inverse paralleled configuration, and the MOSFETs are connected in parallel. Both are powered with the same voltage, and the IGBTs and MOSFETs can be switched on or off with a logic control signal.

In operation, the IGBTs are switched on or off with a positive-going or negative-going waveform. A positive-going waveform turns on the IGBTs and switches off the MOSFETs, allowing current to flow. When the waveform goes negative, the IGBTs are turned off and the MOSFETs are turned on, allowing the current to be switched off.

The MOSFETs are used to reduce switching losses, as they act as a kind of buffer between the IGBTs and the loads, reducing the voltage across the IGBTs during switching. The control logic signals can also be designed to reduce losses by delaying the turn-on or turn-off times of the IGBTs. In addition, the IGBTs can be turned on or off very quickly, achieving fast switching frequencies.

Overall, APTGT400U120D4G has excellent high-frequency power characteristics and provides high efficiency and low switching loss, making it a very suitable choice for a wide range of applications. Its excellent switching capabilities make it suitable for applications such as motor drives, power supplies, and even LED lighting. Furthermore, it is a high current / high power semiconductor device combining high-frequency power MOSFETs, low-power IGBTs and associated high-speed drivers and diodes.

The specific data is subject to PDF, and the above content is for reference

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