Allicdata Part #: | APTGT450SK60G-ND |
Manufacturer Part#: |
APTGT450SK60G |
Price: | $ 64.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 550A 1750W SP6 |
More Detail: | IGBT Module Trench Field Stop Single 600V 550A 175... |
DataSheet: | APTGT450SK60G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 58.20120 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 550A |
Power - Max: | 1750W |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 450A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 37nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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Transistors - IGBTs - Modules
APTGT450SK60G is an insulated gate bipolar transistor (IGBT) module, which is a device typically used for controlling or switching high-power electric circuits. IGBTs have a better power-to-space ratio compared with bipolar transistors and are the most widely used type of high-power, power-efficiency switching transistor module.
The APTGT450SK60G module is composed by two Power IGBT chips (which both have a junction temperature as high as 250°C) and a fast recovery antiparallel diode, with a total power dissipation of 450 W at 600V (the maximum voltage) per module. This IGBT module is capable of switching currents of up to 500A.
APTGT450SK60G is a valuable choice for applications with simple power management, such as switching AC/DC power, motor control and general-purpose DC/DC converter applications. It also works well under high loads as it has an operating temperature up to 157°C.
Working Principle
An IGBT works in a similar way to a MOSFET, with the main difference that an IGBT has a bipolar junction transistor (BJT) as its input and a MOSFET as its output. When a voltage is applied to the gate, charge carriers from the source flow through the channel until they hit the drain and allow a current to flow in the external circuit.
The BJT works as an amplifier, allowing the gate and drain to be connected with a low on-state resistance, meaning there is less power loss and higher efficiency than in a MOSFET.
Furthermore, the APTGT450SK60G also features an antiparallel diode, which protects the module by allowing a current to pass away in the opposite direction, thus avoiding the formation of a "short circuit".
Application
The high power-efficiency switching and good thermal management of the APTGT450SK60G makes it suitable for several high-power electric applications. As such, this IGBT module is applied in several industrial fields, such as:
- Power inverters and switching regulators
- Frequency converter and servo-motor drive systems
- Machine control
- Power conversion
- Constant-speed motor controls
The module can also be applied in automotive and home appliances.
Conclusion
In conclusion, APTGT450SK60G module is an IGBT module that is able to control high loads and maintain high efficiency with its combination of BJT, MOSFET and the antiparallel diode, which generates a low on-state resistance and allows current to pass away in the opposite direction. It is suitable for several high-power electric applications, such as power inverters, constant-speed motor controls, machine control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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