APTGT50DU120TG Allicdata Electronics
Allicdata Part #:

APTGT50DU120TG-ND

Manufacturer Part#:

APTGT50DU120TG

Price: $ 33.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH DUAL SOURCE SP4
More Detail: IGBT Module Trench Field Stop Dual, Common Source ...
DataSheet: APTGT50DU120TG datasheetAPTGT50DU120TG Datasheet/PDF
Quantity: 1000
100 +: $ 30.29670
Stock 1000Can Ship Immediately
$ 33.33
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 277W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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IGBT (Insulated Gate Bipolar Transistor) is a modern power semiconductor device. IGBT Modules are used in various applications including motor control, power supplies, renewable energy, electric vehicle drives, traction applications, electrical machines and many other advances applications. The APTGT50DU120TG IGBT Module is specifically designed for high-frequency applications and is used in various power electronics system.

The APTGT50DU120TG IGBT Module is designed to provide a robust and reliable power solution to applications that require switching of high voltage with high power levels. It offers the highest frequency performance available in an IGBT Module in the market, making it ideal for high-frequency switching of power electronic circuits. It has an impressive power rating of up to 6.5kV.

The working principle of the APTGT50DU120TG IGBT Module is based on two parts, the gate-controlled IGBT and the Emitter Controlled Diode (ECD). The IGBT is a voltage controlled device which, when a positive gate to emitter voltage is applied, the device switches. This switching action results in current flowing through the device, which is referred to as the conduction state of the device. The Emitter Controlled Diode (ECD) works in parallel with the IGBT and helps reduce the switching time of the IGBT Module.

The primary application fields of the APTGT50DU120TG IGBT Module include motor control, power supplies, renewable energy, electric vehicle drives, traction applications, electrical machines, and other power electronics systems. Its high-frequency performance is ideal for applications that require switching power at higher rates than regular IGBTs. The APTGT50DU120TG IGBT Module also offers excellent thermal performance and low power dissipation. The device also features self-protection and the highest overload capability in its class.

The APTGT50DU120TG IGBT Module is a device that offers an efficient and reliable power solution to various applications that have to switch high voltage and power levels. It has the highest frequency performance of any IGBT Module currently available in the market, making it ideal for high-frequency switching of power electronic circuits. Its application fields include motor control, power supplies, renewable energy and electric vehicle drives, among other applications. Additionally, the device features self-protection and the highest overload capability.

The specific data is subject to PDF, and the above content is for reference

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