Allicdata Part #: | APTGT750U60D4G-ND |
Manufacturer Part#: |
APTGT750U60D4G |
Price: | $ 69.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 1000A 2300W D4 |
More Detail: | IGBT Module Trench Field Stop Single 600V 1000A 23... |
DataSheet: | APTGT750U60D4G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 63.24440 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 1000A |
Power - Max: | 2300W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 800A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 49nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | D4 |
Supplier Device Package: | D4 |
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APTGT750U60D4G is a kind of IGBT module from Mitsubishi’s electrical semiconductor products. This module is suitable for applications in the automotive, industrial, solar and renewable power, and consumer electronics industries. By combining a field-effect transistor and an insulated gate bipolar transistor in a single device, the APTGT750U60D4G provides considerable improvement in power loss, surge durability, and noise immunity when compared to conventional transistors.
Applications
APTGT750U60D4G is an industry standard device used in many applications due to its versatility and performance capability. A few of the common applications include, but are not limited to, electric power steering systems, switching power supplies, motor drives, UPS, welding, and photovoltaic inverters.
Working Principle
The main function of the APTGT750U60D4G is to act as a switch, enabling the forward and reverse flow of electric current. It works on the same principles as a conventional power transistor, but with the added benefit of insulated gate bipolar transistor. The IGBT functions as an insulated switch, but instead of having two properly insulated connections, there are three electrodes. One electrode is the emitter, one is the collector and one is the gate. The gate is insulated from the other two, and therefore by applying proper electrical signals to the gate, the transistor can be switched between blocking and conducting states.
The APTGT750U60D4G can handle higher voltages and current than conventional transistors, and at the same time produce less power losses. This combination of features makes it particularly suitable for applications requiring higher levels of power conversion efficiency, such as motor drives and UPS.
The APTGT750U60D4G is also capable of fast switching between different states, making it possible to control various types of power conversion applications such as solar inverters or welding machines with high accuracy and control. The device also has a wide operating temperature range, making it suitable for use in many different environments.
Conclusion
The APTGT750U60D4G is a high-performance and versatile IGBT module suitable for use in many different applications. Its combination of power handling capability and fast switching speeds makes it an ideal choice for environments requiring efficiency and precise control. Furthermore, its wide operating temperature range and insulation make it suitable for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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