Allicdata Part #: | APTGT75DA120TG-ND |
Manufacturer Part#: |
APTGT75DA120TG |
Price: | $ 30.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 110A 357W SP4 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 110A 35... |
DataSheet: | APTGT75DA120TG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 27.63190 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 110A |
Power - Max: | 357W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 5.34nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Description
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Transistors - IGBTs - Modules
The APTGT75DA120TG module is a specially designed device that provides superior performance and reliability in ensuring a solid state connection between power electronic circuits and power electronic oscillators. The APTGT75DA120TG module is an insulated gate bipolar transistor module (IGBT) capable of operating in a wide range of power system temperatures.Overview
The APTGT75DA120TG module is used in power electronics as an alternative to traditional mechanical switching solutions. It is constructed from two epitaxial layers of insulated gate N+ P-type silicon wafers which are arranged in an alternating pattern. The alternating layer structure provides a low-voltage and fast-switching IGBT module which can be used in a wide range of high-frequency power systems.The APTGT75DA120TG module has an optimized gate drive circuit and an optimized body diode voltage breaking capability. The fast switching IGBT module can be used in applications where the system voltage is normally above 600 volts and the frequency of operation can be up to 10 kHz. Due to its wide temperature-range operation and its low-voltage characteristics, the APTGT75DA120TG module is ideal for industrial power applications. The module is designed to ensure that the gate voltage does not exceed the rated value and to minimize the switching noise that can be generated during the switching process.APTGT75DA120TG Applications
The APTGT75DA120TG module is ideal for industrial applications such as motor drives, welding machines, UPS systems, wind turbine inverters, grid-tie inverters, and other high-frequency power applications. With its robust design and fast-switching capabilities, the APTGT75DA120TG module is an excellent choice for industrial power applications.In motor drives, the APTGT75DA120TG module can be used to control the speed and torque of electric motors, while also providing protection against overtemperature and overvoltage. The fast switching capabilities of the APTGT75DA120TG module make it ideal for motor drives where the system voltage and frequency can range from several hundred volts up to several thousand volts. Additionally, the module can be used in welding machines to regulate the amount of energy provided to the welding arc.In wind turbine inverters, the APTGT75DA120TG module can be used to control the DC/AC conversion process and to regulate the power output of the turbine. Furthermore, in grid-tie inverters, the module can be used to provide a reliable service when converting DC power to AC power. Finally, the APTGT75DA120TG module can be used in other high-frequency power applications such as medical imaging and robotics.APTGT75DA120TG Working Principle
The APTGT75DA120TG module is composed of two epitaxial layers of insulated gate N+ P-type silicon wafers. When no gate voltage is applied, the semiconductor layers remain in their reverse-biased state and no current flows through the device. When a gate voltage is applied to the module, the resistance of the device decreases, allowing current to flow through it.The current flow through the IGBT module is proportional to the amount of voltage applied to the gate. This allows the module to be operated at different speed, strength and power levels, depending on the gate voltage applied. Furthermore, the module has a fast switching time due to the optimized gate drive circuit, allowing it to be used in a wide range of high-frequency applications.Conclusion
The APTGT75DA120TG module is a highly reliable and robust device that can be used in a wide range of industrial power applications. It is composed of two epitaxial layers of insulated gate N+ and P-type silicon wafers, which allow it to operate at low-voltage and fast-switching speeds. Furthermore, the module has an optimized gate drive circuit and low-voltage characteristics, making it ideal for use in motor drives, welding machines, UPS systems, wind turbine inverters and grid-tie inverters. Finally, due to its fast switching capabilities, the APTGT75DA120TG module can also be used in medical imaging and robotics.The specific data is subject to PDF, and the above content is for reference
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