APTGT75DA60T1G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	100A
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 75A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	4.62nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP1
Supplier Device Package:	SP1

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Application Field and Working Principle of APTGT75DA60T1G

APTGT75DA60T1G is an Insulated Gate Bipolar Transistor (IGBT) which comes under the module class of transistors. It is a semiconductor device consisting of two types of transistors, which together increase its power efficiency and improve signal transmission performance compared with other single type transistors. This article will look into its application field and the working principle.

Application Field

APTGT75DA60T1G is a module-style IGBT, and its applications include:

• Power supply systems, such as DC-DC converters and AC power supplies.
• Motor control, such as UPS systems and frequency inverters.
• Power transmission control, such as uninterruptible power supplies.
• Electronic and medical equipment, such as TV and audio systems, X-ray equipment and laser machines.

The device can also be used in applications where higher currents or voltages are required, and the IGBT is robust enough to withstand high temperatures.

Working Principle

The working principle of an IGBT is similar to that of a MOSFET. A gate voltage applied to the gate-source of the IGBT induces a current through the device, allowing current to flow in the drain-source direction. The IGBT takes advantage of the characteristics of both transistors, allowing for a high current density with a low gate voltage.The IGBT also has a body diode due to the opposed emitter-base junctions of its two transistors, which works similarly to a MOSFET’s body diode. This diode allows the IGBT to be used as a high-current switch, with low on-state voltage drop as well as high-energy efficiency.Moreover, the device has an intrinsic temperature protection feature which monitors the junction temperature of the device. If the temperature reaches a certain threshold, the device will shut off, protecting it from overheating and damage.

Conclusion

APTGT75DA60T1G is a module-style IGBT which can be used in a variety of power applications, such as DC-DC converters, AC power supplies, motor control, and power transmission control. The device works on a similar principle as the MOSFET, and is robust enough to withstand high temperatures. Additionally, the IGBT is equipped with a body diode which allows for a low-voltage, high-current switch and an intrinsic temperature feature to protect the device from overheating.

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