APTGT75TA120PG

Transistors - IGBTs - Modules

APTGT75TA120PG is a type of insulated gate bipolar transistor (IGBT) within the module package. This type of IGBT is utilized in high performance applications where its combination of high power, speed and efficiency yields the best results in terms of achieving desired performance levels. This particular module offers 650V blocking voltage, 8A peak collector current, 5.5nsec switching speed and a total power dissipation of up to 150W.

Applications

The high switching speed and power dissipation of the APTGT75TA120PG makes it well suited for use in a variety of high-performance applications including power converters, audio amplifiers, high-speed logic switches and motor control. Due to the high efficiency, stability, and compactness of IGBTs in general, they are continuing to replace MOSFETs and other discrete devices in an ever increasing variety of designs.

Working Principle

Insulated gate bipolar transistors (IGBTs) are an improvement on traditional bipolar transistors. Typically these devices feature two terminals – the emitter and collector – between which current flows when the device is active. However, IGBTs also feature a third terminal – the gate – which is used to control the current flowing between the emitter and collector. By applying a small voltage to the gate, current can be switched on and off at extremely high speeds. In terms of structure, IGBTs consist of two separate components – an insulated gate FET and a bipolar transistor. This combination of components allow IGBTs to achieve speeds of switching far greater than traditional bipolar transistors.

In addition to the gate voltage, the APTGT75TA120PG module also features a fast discharge circuit. This circuit effectively shorts the gate-emitter junction when the module is operating under high current conditions, helping to reduce the switching time even further and further improving the operational performance of the module.

Conclusion

The APTGT75TA120PG is an IGBT module suitable for a wide range of high-performance applications. Its combination of speed, efficiency and power make it ideally suited for use in modern electronic devices requiring advanced levels of control and operation. The gate voltage and fast discharge circuit work in tandem to reduce switching times even further further boosting its performance capabilities.