Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Dual Boost Chopper
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	100A
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 100A
Current - Collector Cutoff (Max):	100µA
Input Capacitance (Cies) @ Vce:	6nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP3F

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Introduction

The APTGTQ100DDA65T3G is a type of Insulated Gate Bipolar Transistor (IGBT) module. It is a solid-state electronic switching device that combines the features of both transistors and bipolar junction transistors (BJTs). IGBTs offer high-speed switching, which makes them suitable for many applications. In addition, IGBTs are highly efficient and are capable of operating at power levels much higher than those of BJTs.

Application Fields and Working Principle

IGBT modules such as the APTGTQ100DDA65T3G are used in a wide range of applications, including power supplies, motor drives, renewable energy systems, and automotive components. IGBTs can also be used in medical, aerospace, military, and industrial applications. The primary function of an IGBT module is to switch high-voltage, high-frequency electrical signals on and off. It does this by utilizing the bipolar junction transistors to control the voltage and current, while the insulated gate controls the switching speed, allowing high-frequency signals to be changed quickly. When the IGBT module is turned on, the voltage at the gate is increased, causing the current to flow through the base of the two transistors. This creates a large junction field, which attracts current carriers from the P-type and N-type semiconductor material and allows them to move between the two layers. As the carriers are attracted, a voltage is created across the junction and a current flows through the transistor. When the module is turned off, the opposite occurs. The voltage at the gate is reduced and the voltage across the junction is reduced. This reduces the amount of current that is able to flow and the transistor is switched off.

Benefits of IGBT Modules

IGBT modules offer a number of benefits compared to other types of switching devices, including: - High efficiency. IGBT modules are able to operate at higher power levels and can control large currents, while still maintaining high efficiency. - Low surge-current. The insulated gate of the IGBT module prevents current surges, which can damage the power system if not monitored. - Fast switching speeds. IGBT modules are able to switch at very high speeds, which is necessary for high-frequency applications. - Low cost. IGBT modules are relatively inexpensive compared to other switching components.

Conclusion

The APTGTQ100DDA65T3G is an IGBT module that is versatile and can be used in a variety of applications. It offers high-speed switching, high efficiency, low surge-current and low cost, making it a popular choice for a wide range of uses.

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