APTGV15H120T3G Allicdata Electronics
Allicdata Part #:

APTGV15H120T3G-ND

Manufacturer Part#:

APTGV15H120T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT NPT BST CHOP FULL BRDG SP3
More Detail: IGBT Module NPT, Trench Field Stop Full Bridge Inv...
DataSheet: APTGV15H120T3G datasheetAPTGV15H120T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT, Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 25A
Power - Max: 115W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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The APTGV15H120T3G module is a powerful, highly efficient IGBT module designed for use in industrial, automotive, renewable energy and aerospace applications. The module features IGBTs, which are bipolar junction transistors based on insulated gate technology. They provide the benefits of fast switching, low on-state voltage drop, easy control and good thermal control. The module also offers good power dissipation and superior current carrying ability.

The IGBTs used in the APTGV15H120T3G module are designed to handle large currents and voltages and are capable of switching large amounts of power quickly and efficiently. The IGBT module also offers superior thermal performance and excellent current-sharing capabilities. This combination of characteristics make the APTGV15H120T3G module an ideal choice for applications requiring high power switching.

The APTGV15H120T3G module has a pair of IGBTs arranged in an insulated gate configuration. The IGBTs are connected in a series configuration, with the gate of each IGBT connected to the collector of the other. This arrangement allows both IGBTs to be activated at the same time, which enables the module to switch large amounts of power efficiently. The module also has two diodes to help provide protection against reverse voltages.

In addition to its high current and power switching capabilities, the APTGV15H120T3G module also offers superior thermal control. This is due to the fact that the IGBTs are arranged in a series configuration, which allows for better thermal management. The module also features a special thermal pad that dissipates heat from the IGBTs and helps protect the device from thermal runaway.

The APTGV15H120T3G module is ideal for applications that require fast switching, high current and/or high power levels, and good thermal control. Examples of such applications include motor control, solar inverters, power supplies, and uninterruptible power supplies. The module also has superior current-sharing capabilities, which make it ideal for applications that require multiple power supplies.

The APTGV15H120T3G IGBT module is a powerful, highly efficient and reliable power switching solution. With its combination of fast switching characteristics, low on-state voltage drop, and excellent thermal performance, it is an ideal choice for numerous applications requiring high power and current switching. Additionally, its superior current-sharing capabilities make it suitable for applications requiring multiple power supplies.

The specific data is subject to PDF, and the above content is for reference

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