APTGV30H60T3G Allicdata Electronics
Allicdata Part #:

APTGV30H60T3G-ND

Manufacturer Part#:

APTGV30H60T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT NPT BST CHOP FULL BRDG SP3
More Detail: IGBT Module NPT, Trench Field Stop Full Bridge Inv...
DataSheet: APTGV30H60T3G datasheetAPTGV30H60T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT, Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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The APTGV30H60T3G is an IGBT module made by Eupec Infineon Technologies. It is designed for use as a switching component in applications such as motor and solar inverters, general-purpose inverters, DC/DC converters, AC/DC converters, motor drives, uninterruptable power supplies, and AC motor drives. The APTGV30H60T3G uses both Insulated Gate Bipolar Transistors (IGBTs) and a Schottky diode to achieve high performance in such applications.

An IGBT is an electronic switching device similar to a bipolar junction transistor, but with an insulated gate. This insulation is necessary to control the flow of current through the device. When the IGBT gate is turned on, the device becomes a low-resistance path, allowing current to flow. When the gate is turned off, the current is cut and the device becomes an open circuit. The insulated gate of the IGBT also enables it to be driven by either DC or pulse-width modulation signals, making it ideal for applications where high-speed switching is required.

The Schottky diode in the APTGV30H60T3G is used to protect the IGBT during switching operations. The diode is connected in reverse polarity with the IGBT, so that when the IGBT is turned off, the diode is able to block voltage from flowing from the load. This reduces the risk of damaging the IGBT due to overvoltage or transient overvoltage conditions.

The APTGV30H60T3G is a low-loss IGBT module that is suitable for applications where power switching is required. Its combination of IGBTs and a Schottky diode provides superior performance in many applications. It is also capable of driving a variety of loads, making it a versatile choice for motor and solar inverters, general-purpose inverters, DC/DC converters, AC/DC converters, motor drives, uninterruptable power supplies, and AC motor drives.

The specific data is subject to PDF, and the above content is for reference

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