APTGV50H120BTPG

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT, Trench Field Stop
Configuration:	Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	75A
Power - Max:	270W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 50A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	3.6nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6-P

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APTGV50H120BTPG Application field and Working Principle

Within the component hierarchy of transistors, IGBTs, and modules, APTGV50H120BTPG is a specialized IGBT module. IGBTs are a type of power semiconductor component that use both features of MOSFETs (transistors that require a small amount of current to indicate output) and bipolar junction transistors ( semiconductors which require two currents to be present in order to create voltage output). These devices are used to create high power and high frequency power applications, such as in computers and ac/dc converters. They can also be used for high voltage and high current applications, such as electric motor drives.

One of the many varieties of IGBT modules is APTGV50H120BTPG, which is a 3-in-1 IGBT module. This module has three power transistors connected in parallel to create a highly efficient and powerful switch. The module includes an IGBT, a fast recovery diode, and a gate drive circuit. The IGBT itself is a high speed switching device capable of switching large currents and high voltage applications in a short amount of time with minimal power losses. The fast recovery diode rectifies the current flow and improves the recovery time of the IGBT during switching operation.

APTGV50H120BTPG has a typical voltage drop of 1.6V and a typice switching frequency of up to 30 kHz. It also has a rated power dissipation of up to 250 W, which means it can handle up to 45 A continuous current. This combination of high power and high speed makes the APTGV50H120BTPG particularly attractive for ac/dc converters, switching power supply, home appliances, and more.

The most notable aspect of APTGV50H120BTPG is its gate drive circuit. This circuit includes a high voltage integrated gate driver that can support up to 600V gate voltage, enabling fast and efficient switching. The gate driver also uses bootstrap capacitors to reduce the power dissipation and provide a low-loss high output. Additionally, the gate drive circuit includes an isolation loop for protection against short circuits and other faults.

As a result, APTGV50H120BTPG is an excellent choice for a variety of high power and high frequency power applications. By combining features of MOSFETs and bipolar junction transistors, this IGBT module is able to provide efficient and reliable power without a large power consumption. As is true of other IGBT modules, it is suitable for applications such as ac/dc converters, switching power supply, home appliances, and much more.

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