AS4C128M16D3-12BCN Allicdata Electronics
Allicdata Part #:

1450-1083-ND

Manufacturer Part#:

AS4C128M16D3-12BCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 2G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 80...
DataSheet: AS4C128M16D3-12BCN datasheetAS4C128M16D3-12BCN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)
Description

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AS4C128M16D3-12BCN is a kind of memory which falls into the category of Synchronous Dynamic Random Access Memory (SDRAM). It is mainly composed of small storage cells which uses standard DRAM array & supporting logic. The chip can be used in a wide range of applications including refreshing control, command decoding, data transfer and memory array.

Application Field

AS4C128M16D3-12BCN is mainly used for industrial applications such as medical imaging, industrial automation, 3D graphic rendering and surveillance camera systems. It provides a wide range of features, including high-speed operation, low-power consumption and fast data transfer. It can also be used in consumer applications, like mobile phones and smart watches.

Working Principle

AS4C128M16D3-12BCN works on a simple principle. It is composed of two basic components; the cell array itself and supporting circuitry. The cell array is divided into a number of fields, each of which contains a single DRAM memory chip. The supporting circuitry consists of command decoders, a row refresh control circuit and a clock circuit.

When a command is issued, the command decoder decodes the command and sends a signal to the appropriate row refresh control circuit which in turn sends the appropriate control signals to the DRAM chip. This activates the appropriate cell array row and the data that is stored in the cell array can be accessed. Each row contains multiple columns which allows for faster data transfer.

When the cell array is no longer being used, the row refresh control circuitry kicks in and refreshes the contents of each row. This is done to prevent data loss and improve the performance of the memory chip overall.

Conclusion

In conclusion, AS4C128M16D3-12BCN is a versatile memory chip that can be used in a wide range of applications. It is composed of a DRAM array and supporting logic and its working principle is quite simple; issuing a command to the command decoders which in turn activate the appropriate cell array row and fetch the data. Finally, the row refresh control circuitry refreshes the contents of each row to prevent data loss and improve the performance of the memory chip.

The specific data is subject to PDF, and the above content is for reference

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