Allicdata Part #: | 1450-1458-ND |
Manufacturer Part#: |
AS4C16M32MSA-6BIN |
Price: | $ 4.20 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 512M PARALLEL 90FBGA |
More Detail: | SDRAM - Mobile SDRAM Memory IC 512Mb (16M x 32) Pa... |
DataSheet: | AS4C16M32MSA-6BIN Datasheet/PDF |
Quantity: | 92 |
1 +: | $ 3.81780 |
10 +: | $ 3.48327 |
25 +: | $ 3.41687 |
50 +: | $ 3.39356 |
190 +: | $ 3.04423 |
380 +: | $ 3.03253 |
570 +: | $ 2.84323 |
1140 +: | $ 2.72224 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile SDRAM |
Memory Size: | 512Mb (16M x 32) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-VFBGA |
Supplier Device Package: | 90-FBGA (8x13) |
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AS4C16M32MSA-6BIN is a Memory used in a variety of applications. It is a type of Nonvolatile Memory (NVM) that uses electronic components and specialized algorithms to store data. It can provide high-capacity data storage while maintaining characteristic nonvolatility and low power operation.
Application Field
The AS4C16M32MSA-6BIN is suitable for digital consumer applications such as automotive, consumer electronics, gaming, navigation and communication. It offers wide temperature range and very low power operation ideal for consumer applications. It also supports error checking and correction algorithms for enhanced data protection. Its high-endurance feature allows data to be re-written and stored over time.
AS4C16M32MSA-6BIN is also used for professional and industrial applications such as aerospace, medical, industrial automation, and commercial systems. It provides variable temperature support and high performance operation, ideal for critical applications that require reliable data storage in tight spaces. Its high endurance feature and error correction algorithms ensures reliable operations over long periods of time.
Working Principle
The AS4C16M32MSA-6BIN utilizes advanced logic circuitry and algorithms to store and retrieve data. The device consists of rows and columns of nonvolatile memory cells. Data is written into and read out of these cells using a special circuitry that converts the data into an electrical signal. The data is stored in the memory cells and is maintained even when power is not present.
Data is written to and read from the AS4C16M32MSA-6BIN using a programming language called Basic Input Output System (BIOS). BIOS supports both memory read and write operations. When a program wants to access data from the memory, it sends an address to the memory and the memory retrieves the data from the corresponding address. There are also special instructions that allow data to be written to the memory cells.
AS4C16M32MSA-6BIN also includes error-checking and correction algorithms to ensure data integrity. The device supports various types of error detection and correction, including parity, ECC, BCH and Hamming codes, which safeguard the data stored in the memory.
In order to maximize the device performance, the AS4C16M32MSA-6BIN utilizes a low power sleep mode. This mode allows the device to enter into a low power state when it is not actively used, thereby saving energy.
Conclusion
The AS4C16M32MSA-6BIN is a type of Nonvolatile Memory (NVM) used in a variety of consumer and industrial applications. Its wide temperature range and low power operation makes it suitable for consumer applications, while its high-endurance feature and error detection and correction algorithms make it suitable for professional and industrial purposes. It employs advanced logic circuitry and algorithms to store and retrieve data, and utilizes a low power sleep mode to maximize efficiency.
The specific data is subject to PDF, and the above content is for reference
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AS4C8M32S-7TCN | Alliance Mem... | 4.27 $ | 82 | IC DRAM 256M PARALLEL 86T... |
AS4C128M16D3A-12BCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BCN | Alliance Mem... | 4.8 $ | 50 | IC DRAM 2G PARALLEL 96FBG... |
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AS4C64M16D2-25BAN | Alliance Mem... | 4.84 $ | 195 | IC DRAM 1G PARALLEL 84FBG... |
AS4C64M16D3-12BAN | Alliance Mem... | 4.91 $ | 162 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
AS4C256M16D3A-12BAN | Alliance Mem... | 9.67 $ | 253 | IC DRAM 4G PARALLEL 96FBG... |
AS4C32M16SB-7TCNTR | Alliance Mem... | 6.51 $ | 1000 | IC DRAM 512M PARALLEL 54T... |
AS4C128M8D2-25BIN | Alliance Mem... | 4.2 $ | 1358 | IC DRAM 1G PARALLEL 60FBG... |
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AS4C8M16SA-6BIN | Alliance Mem... | 3.18 $ | 391 | IC DRAM 128M PARALLEL 54T... |
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