AS4C16M16D1A-5TCNTR Allicdata Electronics
Allicdata Part #:

AS4C16M16D1A-5TCNTR-ND

Manufacturer Part#:

AS4C16M16D1A-5TCNTR

Price: $ 1.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 20...
DataSheet: AS4C16M16D1A-5TCNTR datasheetAS4C16M16D1A-5TCNTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.33239
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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AS4C16M16D1A-5TCNTR, or the 4C16M16D1A-5TC NTRAX4 industrial-grade 512M SDRAM is a type of memory used in a variety of industrial and communications applications. This memory is rated for operation at temperature levels ranging from -40°C to 85°C. It is an automotive-grade (~5V) SDRAM with a 16K page size, a burst of 8 and an access time of 1 ns.The AS4C16M16D1A-5TCNTR offers higher performance capability than typical DRAMs, with up to 16x faster random access time and 4x faster page access time. It has higher speed data transfer capability, making it suitable for applications where speed is essential, such as avionics and industrial equipment.The AS4C16M16D1A-5TCNTR is suited for industrial and communications applications such as network switchboard, telecommunications, and data communications. It is also used in automotive electronic systems, gaming consoles, as well as battery-operated electronic and computing applications.As for the working principle, the AS4C16M16D1A-5TCNTR uses a simple dynamic random access memory (DRAM) technology. This memory works by storing data on a series of memory cells arranged along a grid. Each cell has a certain voltage level stored on it, and when the cells are selected a certain amount of electrical charge is added or removed. The DRAM cells remember their contents for only a short period of time, meaning that to maintain their contents, the memory must be refreshed at regular intervals.The amount of data that the AS4C16M16D1A-5TCNTR can store is determined by its size. Its size is determined by the number of cells it contains, which are arranged in a grid. The grid size is determined by the number of bit lines and word lines it contains, as well as its level of integration. The higher the level of integration, the more cells are packed into the memory and the larger its capacity.The AS4C16M16D1A-5TCNTR has relatively low power needs compared to other types of memory, because it does not require the same level of power to operate, and the data stored in it remains functional even at low temperatures. It is generally considered to be a more reliable type of memory, as it is capable of withstanding extreme temperatures, shocks and vibrations, and other environmental conditions that may prove harmful to other types of memory.In conclusion, the AS4C16M16D1A-5TCNTR is a special type of memory designed for industrial and communications applications. It offers higher performance capabilities, making it suitable for applications where speed is essential. It is capable of withstanding extreme temperatures and other environmental conditions, and its relatively low power needs make it suitable for battery-operated and computing applications.

The specific data is subject to PDF, and the above content is for reference

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