AS4C32M16MSA-6BINTR Allicdata Electronics
Allicdata Part #:

AS4C32M16MSA-6BINTR-ND

Manufacturer Part#:

AS4C32M16MSA-6BINTR

Price: $ 3.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 54FBGA
More Detail: SDRAM - Mobile SDRAM Memory IC 512Mb (32M x 16) Pa...
DataSheet: AS4C32M16MSA-6BINTR datasheetAS4C32M16MSA-6BINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.76837
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile SDRAM
Memory Size: 512Mb (32M x 16)
Clock Frequency: 166MHz
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-FBGA (8x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C32M16MSA-6BINTR is a high-density, 6-bitter safe and reliable synchronous dynamic randomly accessible memory (SDRAM) chip. It is suitable for applications where data integrity and reliability are critical, including aerospace, automotive, and medical. The AS4C32M16MSA-6BINTR can be used in a wide range of applications, from ultra-high density computing to multimedia and telecommunication applications.

The AS4C32M16MSA-6BINTR is built using a 0.18-micron process for higher performance and improved power efficiency. It has a wide range of features, including low power consumption, wide operating temperature range, low noise, minimal electromagnetic interference, and ECC error correction. It also has thermal protection, on-chip power control, and multiple timing options.

The AS4C32M16MSA-6BINTR supports up to 16 million words of random access memory and operates on a voltage range of 1.5 to 1.8 volts. It can operate at speeds up to 200MHz and achieves a maximum data transfer rate of 1600Mpbs. It is designed to meet the stringent requirements of mission-critical applications, providing reliable and efficient operation even in the most demanding environments.

The AS4C32M16MSA-6BINTR utilizes a number of innovative technologies, including Intel\'s multi-cell transaction bus (MCTB) protocol. This protocol enables more efficient data transfer between the device and the host, reducing power consumption and latency. It also uses an advanced variable refresh rate mechanism for higher performance, reduced noise, and improved refresh cycles.

The AS4C32M16MSA-6BINTR employs an array of error-correction codes (ECC) which are used to detect and correct errors in data. This helps to ensure that data is accurate and reliable, even in difficult or challenging conditions. The ECC scheme is capable of detecting a single bit error in a 64-byte block of data, and can correct up to two errors per block.

The AS4C32M16MSA-6BINTR also offers several features and technologies which can help maximize system performance. Its multiple timing features enable the device to be flexible in its timing requirements, allowing it to optimize its performance for the application. It also supports on-chip power control, which allows the device to be more power efficient by enabling system power optimization.

The AS4C32M16MSA-6BINTR provides an excellent solution for applications where data integrity, reliability, and performance are of the utmost importance. Its advanced features make it an ideal choice for mission-critical applications, providing reliable and efficient data transfer and storage. With its wide range of features and technologies, it is a reliable and cost-effective choice for a variety of memory applications.

The specific data is subject to PDF, and the above content is for reference

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