AS4C16M16SA-6TIN Allicdata Electronics
Allicdata Part #:

1450-1253-ND

Manufacturer Part#:

AS4C16M16SA-6TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5...
DataSheet: AS4C16M16SA-6TIN datasheetAS4C16M16SA-6TIN Datasheet/PDF
Quantity: 282
Stock 282Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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AS4C16M16SA-6TIN is a type of synchronous dynamic random access memory (SDRAM) for use in various single- and dual-processor computer systems. In addition to providing improved performance, SDRAM also features a variety of high-speed data throughput rates and low-power consumption, making it a popular choice for many types of applications.

The AS4C16M16SA-6TIN is a 16-Mbit (1 MByte) SDRAM device designed specifically for use with a single-cycle 66MHz or 72MHz system bus. It is built around a 4M x 16-bit configuration, with a total capacity of 16,777,216 bits. This product\'s 78-ball, Thin Profile Thin Ball Grid Array package gives it a low profile of 2.1mm height, allowing it to fit into almost any space constraints. The device also includes built-in refresh and refresh control circuits that can be configured for refresh operations with fast refresh requirements.

The AS4C16M16SA-6TIN is designed to deliver a high level of performance while also providing high-speed and reliable data access. It supports burst addressing modes such as sequential and interleaved, which allow multiple memory access requests to be executed in a single clock cycle. It also has a low power consumption of 2.6 V, making it ideal for applications that require the lowest possible power requirements.

The AS4C16M16SA-6TIN also offers many improved features over other SDRAM devices. The device\'s error checking and correction (ECC) capabilities eliminate data corruption from errors that may occur during read or write operations, providing a more reliable and secure memory system. The device\'s write buffers also allow for faster data transfer from system to memory. Additionally, the device includes self-refresh and loop-back modes, providing for greater flexibility in managing memory operations.

The AS4C16M16SA-6TIN is an ideal choice for applications that require high throughput rates, low power consumption, and the ability to manage large amounts of data. It can be used in a variety of single- and dual-processor applications, including mission-critical military and aerospace, commercial, automotive, industrial, and medical systems. Its features make it a reliable and flexible choice for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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