AS4C8M32S-6BIN Allicdata Electronics
Allicdata Part #:

1450-1163-ND

Manufacturer Part#:

AS4C8M32S-6BIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 90TFBGA
More Detail: SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5n...
DataSheet: AS4C8M32S-6BIN datasheetAS4C8M32S-6BIN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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AS4C8M32S-6BIN belongs to the memory category.

AS4C8M32S-6BIN is a high-speed, low-power and high-density Multi Chip Sync Burst SRAM containing 32Mbit of memory. It supports burst lengths of 1, 2, 4, 8, and full page and cycle control that reduce the clock frequency used for transferring of data, thus lowering power consumption. It is suitable for applications requiring the transfer of large amounts of data.

AS4C8M32S-6BIN is an ideal choice for high-performance embedded application, including industrial automation, gaming, TV box, audio and video systems, communications and other consumer products. For example, its integration as an internal cache in embedded microprocessor/microcontroller gives a significant performance improvement to the system.

In addition, AS4C8M32S-6BIN offers a variety of features, such as low-power sleep mode and automatic power-down, that enable higher energy efficiency and reduce system costs. It also integrates several I/O structures that span multiple voltage domains, including clock, address, write enable and output enable, for easy connection to a wide range of devices.

General-purpose read and write operations can be broken down into several specific states: precharge, write/page write, array read, and refresh. In the precharge state, the array is discharged and the bit lines are reset in preparation for subsequent operations. While in the write/page write state, data is written onto the array. Array read state serves to output data from the array, whereas refresh state allows the stored data to be retained.

Furthermore, a small number of other states are used to achieve additional tasks, such as wake-up, sleep, and register read/write. Wake-up is used to exit the low-power sleep mode; sleep is used to enter the low-power sleep mode; and register read/write facilitates writing and reading of firmware and configuration code.

AS4C8M32S-6BIN integrates several features, such as auto precharge, temperature-compensated self-refresh, and internal auto-calibration (IACT) boost, to improve overall performance and reliability of the system.

In summary, AS4C8M32S-6BIN belongs to the memory category and is an ideal choice for high performance embedded applications. It provides a variety of features for enhanced energy efficiency and system cost savings, as well as ensuring data retention and improved performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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