AS4C128M8D3LB-12BIN Allicdata Electronics
Allicdata Part #:

1450-1450-ND

Manufacturer Part#:

AS4C128M8D3LB-12BIN

Price: $ 4.20
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 78FBGA
More Detail: SDRAM - DDR3L Memory IC 1Gb (128M x 8) Parallel 80...
DataSheet: AS4C128M8D3LB-12BIN datasheetAS4C128M8D3LB-12BIN Datasheet/PDF
Quantity: 234
1 +: $ 3.81780
10 +: $ 3.48327
25 +: $ 3.41687
50 +: $ 3.39356
242 +: $ 3.04423
484 +: $ 3.03251
726 +: $ 2.84323
1210 +: $ 2.72224
Stock 234Can Ship Immediately
$ 4.2
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a vital component for all computer systems. AS4C128M8D3LB-12BIN is a memory module from Alliance Memory that expands the capability of a system and significantly increases the speed at which a device can access data. This DRAM module is perfect for application servers, workstations and other high performance computing systems. This is a high performance device and has a capacity of 128 megabytes.

AS4C128M8D3LB-12BIN is a Non-Volatile Dual Inline Memory Module (NVDIMM) that is DDR3L compliant and comes with a CL rating of 12. It operates at a supply voltage range of 1.25V and 1.50V and has a clock frequency of 667 MHz with an access latency of 7.5ns. The module comes with a humidity level between 8% to 85%. This is a low power consuming device that offers high speed memory performance at a low power consumption of only 1.5W.

The DRAM module utilizes eight 16M x 8 SRAM and eight 128M x 8 DRAM memory chips. It is organized as 1600 bytes per row, for a total of 8192 rows. The device comes with an asynchronous interface and is capable of supporting Random-Access Memory (RAM) operations. It uses the latest DRAM technologies to provide the highest performance and reliability.

Additionally, the device has an Error-Correcting Code (ECC) which is used to ensure data integrity. The ECC can be used to detect and correct single bit errors in the chip. This helps to ensure that all data stored in the memory is always accurate. Additionally, the module also comes with an advanced page-mapping technology that allows the chip to store data in the most efficient manner possible.

In order to make sure that the chip is always running optimally, AS4C128M8D3LB-12BIN comes with a special Refresh Rate Register that allows the chip to refresh memory automatically at regular intervals. This helps to prevent data corruption due to age or other factors.

Overall, AS4C128M8D3LB-12BIN is an ideal memory device for high performance computers and application servers. It offers high performance, low power consumption and reliable data storage. The device is perfect for applications such as web servers, gaming, data center environments and any other application which requires high speed memory performance and reliability. This memory module is an excellent choice for any organization looking for a reliable, high performance memory solution.

The specific data is subject to PDF, and the above content is for reference

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