AS4C128M16D3L-12BINTR

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AS4C128M16D3L-12BINTR is a low-power, high-performance memory designed primarily to provide an optimized memory solution particularly suitable in applications such as gaming, vehicle control, medical, industrial control and consumer electronics. It is one of the leading memory devices in terms of memory density, power efficiency and speed.

AS4C128M16D3L-12BINTR is a multi-functioned device that can be used as mass storage, program memory, and volatile memory. It is housed in a low-power 16-pin DIP (Dual In-line Package) package. The device architecture includes a 64-bit DDR3 interface along with configurations for multiple blocks of 1024Mb of total memory density up to 8Gb.

The AS4C128M16D3L-12BINTR operates with a single 2.5V supply. It features an innovative dual-bank register interface to provide higher data bandwidth and maintain high speed DDR3 SDRAM performance. This combination of low-power and wide-programmability makes AS4C128M16D3L-12BINTR an ideal memory solution for energy-efficient applications.

In terms of working principle, the AS4C128M16D3L-12BINTR uses a low-power and low-latency architecture. The device supports asynchronous transfer, meaning that data transmission will not be interrupted during periods of low-activity. This allows for higher throughput and lower latency when accessing data stored in the memory. Additionally, it supports multiple write modes, and can handle up to 32 burst-transactions.

The AS4C128M16D3L-12BINTR application field is wide. One of its great advantages is the advanced protection mechanisms like ECC (Error Correction Code) support, power-on reset, advanced write protection and periodic Refresh. These features make the device an ideal solution for applications such as military, avionics and industrial automation applications. Additionally, the device is well-suited for high-performance communications systems and automotive applications.

In terms of performance, the AS4C128M16D3L-12BINTR is capable of providing transfer rates up to 1466Mb/s. It has an internal page size of 4Kb and a random access latency of 15ns (ideal temperature). The device has a fully-programmable M6 register for write protection, read/write sequencing and data queuing. The device also supports partial-array self-refresh, providing additional power savings for industrial and embedded applications.

Overall, the AS4C128M16D3L-12BINTR is an exceptionally low-power, high-performance memory device. Its innovative architecture and extensive range of features make it ideal for applications in industrial, automotive and medical applications. Its wide range of operating temperature and extreme low latency combined with its energy efficiency makes it the optimal solution for energy-conscious applications.

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