AS4C128M16D3B-12BCN

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The Application Field and Working Principle of AS4C128M16D3B-12BCN

AS4C128M16D3B-12BCN memory is a static random access memory (SRAM) integrated circuit developed by Alliance, recommended to be used in a variety of embedded applications. The SRAM comes in a 45-pin, thin SOIC(TSSOP) package, allowing it to be mounted on various CPU architectures.

Application Field

AS4C128M16D3B-12BCN is a high-performance non-volatility static random access memory (SRAM) integrated circuit specifically designed for use in a variety of embedded applications. It has been specifically designed to provide high speed and low power memory for applications which require large memory sizes and high speed access. The 45-pin SOIC(TSSOP) package is suitable for use in high speed packet processing and data storage applications. AS4C128M16D3B-12BCN is suitable for implementing memory caching, secure storage, data buffering and storage, storage encryption and secure boot, and so on.

Features

The main advantages of AS4C128M16D3B-12BCN memory include:

• High performance: The SRAM has a read speed of 166MHz and a write speed of 138MHz.
• Low power consumption: Typical active current is 8mA while standby current is only 1µA.
• High density: The device has a maximum storage capacity of 512M bits.
• High reliability: The device has a mean time between failures of over 395,000 hours.

Working Principle

AS4C128M16D3B-12BCN is a type of static random access memory (SRAM). SRAM is a type of memory which stores data bits in a two-terminal memory cell. The two terminals of the memory cell, which are denoted by X and Y, are connected to a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET consists of a source region, drain region, and gate region. The information is stored by having the MOSFET remain in one of two possible states, a "1" or a "0". The information is then read from the memory cell via the source and drain terminals.

When a voltage is applied to the gate of the MOSFET, the transistor is in the "on" state, allowing current to flow between the source and the drain. This is known as the "write" operation. When the voltage is removed, the transistor remains in the "on" state, and the information is stored in the memory cell. This is known as the "read" operation.

When the information is no longer needed, the voltage can be reapplied to the gate of the MOSFET to reset the transistor back to the "off" state, thus erasing the information stored in the cell. This is known as the "erase" operation.

Conclusion

AS4C128M16D3B-12BCN is a high-performance non-volatility static random access memory (SRAM) integrated circuit specifically designed for use in a variety of embedded applications. Its 45-pin SOIC(TSSOP) package allows for a highly reliable memory array which has a maximum storage capacity of 512M bits, as well as a read speed of 166MHz and a write speed of 138MHz. The memory also has a modest standby power consumption of only 1µA. The application field and working principle of AS4C128M16D3B-12BCN can be summarized as follows: specifically designed for use in a variety of embedded applications, storing data bits in a two-terminal memory cell using a metal-oxide-semiconductor field-effect transistor (MOSFET), which has two possible states (a "1" or a "0"), read/write/erase operations, and low standby current.

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