AS4C128M32MD2-18BINTR

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Memory: AS4C128M32MD2-18BINTR application field and working principle

AS4C128M32MD2-18BINTR is a 16 megabit, low voltage, dual data rate synchronous dynamic random access memory (SDRAM). It is one of the most popular types of today\'s dynamic random access memory (DRAM), which is widely used in various electronic devices, including mobile phones, digital cameras and personal computers. The AS4C128M32MD2-18BINTR is manufactured by Japanese multinational company, Toshiba.

Application

The AS4C128M32MD2-18BINTR has a wide range of applications in consumer electronics, such as digital cameras and mobile phones. It is also used in personal computers. It is often used in computer motherboard or graphics card, as well as other types of consumer electronics. It can be used as the main memory or video memory in some consumer electronics devices. It is popular in many motherboards and other consumer electronics products, such as digital cameras, digital video recorders, digital media players, televisions, etc.

Working Principle

The AS4C128M32MD2-18BINTR features a low voltage synchronous dynamic random access memory (SDRAM), which requires only 1.8V for operation. The memory is organized into 8 banks and can operate in single-data-rate (SDR) and double-data-rate (DDRx) modes, with a maximum data rate of 128 MT/s. The memory is organized into 4,096 columns and 512 rows, and each row has 16 megabits of storage. The AS4C128M32MD2-18BINTR operates on a 2-clock cycle read or write cycle, and data is transferred in a burst of four 16-bit words. The AS4C128M32MD2-18BINTR supports burst read and burst write operations, allowing the memory to be used in a wide range of applications.

Conclusion

The AS4C128M32MD2-18BINTR is a low voltage, dual data rate synchronous dynamic random access memory (SDRAM). It is popular in consumer electronics, including digital cameras and mobile phones. It is also used in personal computers, such as motherboards and graphics cards. The AS4C128M32MD2-18BINTR features a low voltage synchronous dynamic random access memory (SDRAM) that requires only 1.8V for operation. The memory is organized into 8 banks and can operate in both single-data-rate (SDR) and double-data-rate (DDRx) modes, with a maximum data rate of 128 MT/s. It supports burst read and burst write operations, allowing the memory to be used in a wide range of applications.

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