AS4C128M8D2A-25BIN

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory devices are fundamental components in any digital system design. A memory device is responsible for the storage of information within a digital processor\'s memory space. AS4C128M8D2A-25BIN is a type of commodity SRAM (Static Random Access Memory) used in a wide range of applications to store data temporarily. Its main use is in a variety of electronic devices such as cameras, cell phones, and automotive systems. In these types of applications, this particular SRAM is utilized in order to store information such as battery levels, temperature data, and system clock cycles.

AS4C128M8D2A-25BIN is an 8-bit, 4-bank memory device with 32 million locations. It features a maximum operating frequency of 25 MHz, with a design voltage of 1.8 - 3.6V for both the IO and core voltage. It also includes internal cache with a quantity of 128 x 128 bits and a bank organization of 4K x 32bit for the total of 64K bytes of internal cache. This type of SRAM offers low power consumption levels and comes in a variety of package sizes. The main applications include digital memory, as well as interfacing and communication with external devices.

AS4C128M8D2A-25BIN is a widely used, cost-effective SRAM device designed with a variety of features to handle a variety of tasks. Its low power consumption allows it to be used in a wide range of applications where power efficiency is essential. Its 8-bit architecture is optimized for systems running at high speeds and its internal cache helps reduce access time. This type of SRAM can also be used in embedded systems, allowing for quick access and updating of data in real time.

The working principle of the AS4C128M8D2A-25BIN memory module is based on the concept of storing electrical charges in capacitors. In an SRAM device, charge is stored in two transistors known as cross-coupled inverters. These two transistors act as a digital flip-flop and store a charge representing either a "0" or "1". Since these transistors are connected together in a ring, the charge stored in them is able to be read and updated by applying appropriate voltages. Depending on the voltage applied, the charge stored in the transistors can either be released or reinforced.

The AS4C128M8D2A-25BIN memory device is widely used in various electronic applications due to its efficiency and reliability. It has a maximum operating frequency of 25MHz and its internal cache helps reduce access time. Its low power consumption makes it a cost-effective option for applications that require power efficiency. The working principle of this SRAM is based on the concept of storing electrical charges in capacitors, in order to maintain a digital representation of data.

The specific data is subject to PDF, and the above content is for reference