AS4C32M32MD2A-25BCNTR

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AS4C32M32MD2A-25BCNTR is a dynamic random access memory (DRAM) manufactured by Alliance Memory, Inc. The memory is designed for applications requiring the absolute highest performance, reliability, and power efficiency. Its exceptional speed, low power consumption and long-term durability make it an ideal choice for a wide range of applications, including embedded systems and mission-critical applications.

The AS4C32M32MD2A-25BCNTR has a capacity of 4Gb and supports a data transfer rate of up to 1066 Mbps. It is a DDR3L device, with a supply voltage range of 1.35 to 1.45V, and an access time of up to 15 ns. The memory is available in two temperature grades, ‐40°C to +85°C and ‐25°C to +85°C.

The memory is well-suited for mobile applications and consumer electronics, such as cellular phones, tablets, netbooks, and laptop PCs. It offers exceptional speed, power efficiency, and variability, with features including self-refresh, multiple burst lengths, and scatter/gather auto precharge. In addition, the memory incorporates an internal voltage regulator for low power operation, a built-in power monitor, and fault detection and correction.

The AS4C32M32MD2A-25BCNTR memory is also ideal for high-performance industrial applications, including wireless communications, digital televisions, automotive infotainment systems, and ultra-high definition displays. It offers robust power management and a high level of reliability, even in critical 24/7 operation.

The working principle of the AS4C32M32MD2A-25BCNTR is based on forming a continuous row of cells in a high-density array. Each cell is made up of two capacitors, with data stored in the capacitors. The memory is organized into memory banks with multiple cells, each connected to a sense amplifier. The sense amplifier senses the charge stored in each capacitor, and reads or writes the data. The data is then passed on to the memory controller, which accesses the information stored in the memory.

The cells in the high-density array are arranged in two half-columns, connected to each other via a multiport. When requested by the memory controller, the multiport distributes data between the two columns. The memory controller can then access the data stored in the memory by providing the appropriate address and command signals.

The AS4C32M32MD2A-25BCNTR memory also has control registers and Self Refresh/Self Refresh Refresh (SRE/SRR) cycles to control the timing and power management of the device. The control registers allow the user to program various memory configurations such as burst length, write recovery time and auto precharge time.

The AS4C32M32MD2A-25BCNTR is an excellent choice for applications requiring the highest level of performance and reliability. With its low power consumption, its long-term durability, and its ability to handle a wide range of applications, it is sure to serve users of all types well.

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