AS4C2M32D1-5BCN

Memory: AS4C2M32D1-5BCN Application Field and Working Principle

AS4C2M32D1-5BCN is a high-quality static random access memory (SRAM). This application field mainly includes smart phones, tablets, digital cameras, digital medical cameras, instrument control, medical equipment, automotive infotainment systems, digital toys, etc. Today we\'ll take a close look at the working principle of the AS4C2M32D1-5BCN.

AS4C2M32D1-5BCN Overview

AS4C2M32D1-5BCN is a 1,024K-bit Static Random Access Memory, suitable for low-power 8-bit and 16-bit data storage. It is a CMOS synchronous Static RAM (SRAM) designed with 1,024K words × 8 bits. It adopts low voltage operating mode and consumes 35% lower power than the conventional LVTTL. It also contains a content-addressable memory (CAM) and is a real-time data storage solution in high reliability and low power consumption.

Features and Advantages

AS4C2M32D1-5BCN has a number of high performance features that makes it perfect for low-power applications. The first is its low-power consumption. At 1.8V supply voltage, AS4C2M32D1-5BCN is rated to consume only 35 percent of the power compared to a LVTTL SRAM. It also requires no external components for its operation, making it highly reliable and effortless to use.AS4C2M32D1-5BCN also features enhanced ECC. It features a built-in Error Correcting Code (ECC), which means that data can be stored without worry of losing it due to errors in transmission or storage. This error-correcting capability not only increases reliability but also reduces power consumption, as the device will not need to perform data recovery operations.

AS4C2M32D1-5BCN Working Principle

AS4C2M32D1-5BCN is based on a synchronous SRAM architecture, which simplifies the system integration process and speeds up data access. In a synchronous SRAM, both the read and write operations are controlled by a synchronous clock signal. It is an asynchronous SRAM, meaning that the write operation is triggered by data on the input bus and the read operations are initiated by the output pins. The read/write logic is activated by the rising edge of the clock signal, which is then distributed across the whole device.

In a synchronous SRAM, each cell contains two transistors and one capacitive element. The transistors are used to store data, while the capacitive element acts as a buffer to ensure that the data is stored until it is read. When data is written to or read from the SRAM, a small voltage (Vcc) is generated and the transistors increase their conductivity so that current flows from the EEPROM’s output to the memory’s input. The capacitive element in the cell stores the data till the SRAM wants to read it.

Additionally, the AS4C2M32D1-5BCN utilizes Content-Addressable Memory (CAM) for faster access and data reliability. CAM is a form of Associative Memory which facilitates the quick retrieval of data stored. In CAM, data is first stored in a memory and then the memory location with the required data can be located by looking up the address of the memory location directly, without physically searching each one. This saves both time and power, as well as improves data retrieval process.

Conclusion

The AS4C2M32D1-5BCN is a versatile and powerful memory solution designed to handle low-power and high-reliability applications like smart phones, digital cameras and digital medical cameras. The synchronous SRAM architecture simplifies system integration and speeds up data access, while the content-addressable memory ensures fast retrieval and high data reliability. With its low-power consumption, the AS4C2M32D1-5BCN is an ideal choice for portable electronics.