Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR
Memory Size:	512Mb (32M x 16)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	700ps
Memory Interface:	Parallel
Voltage - Supply:	2.3 V ~ 2.7 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package:	66-TSOP II

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

AS4C32M16D1A-5TCN is a low power 16 megabit synchronous DRAM module memory which is currently one of the most advanced DRAM products in the market. This low power DRAM module combines high performance, low power consumption and is ideal for use in various consumer products such as portable electronics and audio players. This module utilizes four 32 Mbit STMicroelectronics TechNologies AS4C32M16D1A Fast Cycle RAM chips to provide a total capacity of 512 kilobytes.

Applications

The AS4C32M16D1A-5TCN memory module is usually used in consumer products such as laptop computers, portable audio devices, and gaming consoles. This module is also used in applications that require high speed and low power such as video streaming, video capture/editing, video conferencing and 3D image processing. This low power DRAM module also enables devices to run faster, as well as improving performance and longevity of products.

Design Features

The AS4C32M16D1A-5TCN memory module has several key features. This module has an operating voltage supply of 2.5V-3.3V and an asynchronous mode cycle time of 4ns. This module also has an output drive of 5mA, on-chip refresh and auto-refresh capability. Its auto-refresh period is 8.67ms at 667kHz with support for four bank organization. The module also supports a read cycle time of 4ns/33.3MHz, a write cycle time of 4ns/33.3MHz and a read/write access time of 5ns/5.5ns at 566MHz.

Working Principle

The AS4C32M16D1A-5TCN memory module is a synchronous DRAM, meaning that its operation is tied to an external clock signal. In this module, the data bus is driven directly by clock signals, eliminating the need for latched input buffers or core logic.When the system clock begins, the data bus is driven continually in a specified "burst" order. This burst order is specified at the beginning of a read or write operation. At the same time, the data is directed to the internal address multiplexer, which generates the memory address signals used to access data stored in the DRAM array.The address multiplexer is also used to generate the various control signals used to control the DRAM, such as RAS, CAS, and CLK signals. These control signals are used to control the various operations of the memory module, such as refreshing and data retrieval.

Conclusion

The AS4C32M16D1A-5TCN is a low power 16 megabit synchronous DRAM module memory and is currently one of the most advanced DRAM products on the market. This module offers superior performance, low power consumption and is suitable for a variety of applications. This module utilizes four 32 Mbit STMicroelectronics TechNologies AS4C32M16D1A Fast Cycle RAM chips and features an operating voltage supply of 2.5V-3.3V, an asynchronous mode cycle time of 4ns, an output drive of 5mA, and on-chip refresh and auto-refresh capability. In addition, this module supports a read/write access time of 5ns/5.5ns at 566MHz. By using synchronous DRAM technology, this module offers superior performance and low power consumption to enable devices to run faster, as well as improving their performance and longevity.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description