AS4C4M32S-6TIN Allicdata Electronics
Allicdata Part #:

1450-1078-ND

Manufacturer Part#:

AS4C4M32S-6TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 128M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5....
DataSheet: AS4C4M32S-6TIN datasheetAS4C4M32S-6TIN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C4M32S-6TIN is a fast growing family of Flash memory technology developed by Alliance Memory. Flash memory uses electrically erasable programmable read-only memory (EEPROM) to store data. Unlike other types of memory, flash memory does not require power to maintain stored data, making it a very popular choice for applications where data storage solutions need to remain stable in extreme temperatures or in low power situations.

Application Field of AS4C4M32S-6TIN:

One of the primary application fields of the AS4C4M32S-6TIN Flash Memory is automotive, where large data files must be stored and readily accessed in a wide range of temperatures and in varying power conditions. The AS4C4M32S-6TIN is also used in industrial, medical, and military applications where data needs to remain stable and secure in challenging environments. In addition, the AS4C4M32S-6TIN is a popular choice for embedded solutions, including networking, telecommunications, and consumer electronics.

Working Principle of AS4C4M32S-6TIN:

The AS4C4M32S-6TIN Flash Memory works by storing data in floating-gate transistors. Unlike other types of memory, flash memory does not require power to maintain stored data. Data is written to the memory by charging the floating-gate transistor with electrons, which increases the transistor’s threshold voltage. To erase data, the electrons are removed from the floating-gate transistor, lowering the threshold voltage and allowing the transistor to discharge. This process of charging and discharging the floating-gate transistors is referred to as “programming” the device.

The AS4C4M32S-6TIN Flash Memory offers superior read and write speeds, as well as increased endurance and data retention times compared to traditional memory solutions. Additionally, the device offers the highest levels of data protection and security, making it an ideal solution for applications that require maximum storage capacity in extreme or volatile environments.

The specific data is subject to PDF, and the above content is for reference

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