AS4C128M8D3B-12BANTR Allicdata Electronics
Allicdata Part #:

AS4C128M8D3B-12BANTR-ND

Manufacturer Part#:

AS4C128M8D3B-12BANTR

Price: $ 3.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 800...
DataSheet: AS4C128M8D3B-12BANTR datasheetAS4C128M8D3B-12BANTR Datasheet/PDF
Quantity: 1000
2500 +: $ 3.19405
Stock 1000Can Ship Immediately
$ 3.51
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)
Description

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AS4C128M8D3B-12BANTR is a low-power, low-voltage dual-mode memory. It integrates the latest advances in memory architecture and design, allowing high-speed on-chip communication, data transfer and manipulation capabilities. It is a single component memory solution suitable for a variety of applications, ranging from embedded systems to consumer and industrial electronics. The AS4C128M8D3B-12BANTR provides up to four times the data transfer speed of conventional SRAMs, and is designed for data intensive applications such as gaming, streaming video and 3D graphics.

The AS4C128M8D3B-12BANTR can support a variety of operating modes such as Static Random Access Memory (SRAM) and Pseudo-Random Access Memory (PRAM). The integrated data buffer allows for up to four times the data transfer speed of conventional SRAMs, making it suitable for data-intensive applications. The PRAM operating mode supports fast write operations and accepts high frequency signals, making it capable of handling data rates up to 66Mhz. Furthermore, it supports up to 8 bits of data at a time, allowing for faster and more efficient memory utilization.

As far as the application field of AS4C128M8D3B-12BANTR, it is suitable for a variety of applications including embedded systems, consumer electronics, and digital signal processing. It can be used in mobile phones and other smart mobile devices, integrated circuit applications, and digital signal processing applications. As far as the working principles is concerned, the AS4C128M8D3B-12BANTR offers a number of advantages, including faster data transfer rates, higher memory densities and increased power efficiency. By utilizing the integrated buffer, data can be transferred at faster rates than conventional SRAMs. Furthermore, its pseudo-random access memory structure enables faster write operations and better resistance to noise, thereby providing for greater memory density. In addition, its low power consumption makes the component ideal for battery-powered applications.

The AS4C128M8D3B-12BANTR is a multi-mode low-voltage memory component designed to enhance the performance and efficiency of embedded systems, consumer electronics and digital signal processing systems. It integrates the latest advancements in memory architecture and design, allowing data transfer and manipulation capabilities at faster speeds than conventional SRAMs. Furthermore, it also offers a greater data density and increased power efficiency, making it suitable for a wide range of applications. All in all, the AS4C128M8D3B-12BANTR offers the performance and reliability required for today\'s demanding applications, while simplifying system design.

The specific data is subject to PDF, and the above content is for reference

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