AS4C128MD2-25BCNTR Allicdata Electronics
Allicdata Part #:

AS4C128MD2-25BCNTR-ND

Manufacturer Part#:

AS4C128MD2-25BCNTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400...
DataSheet: AS4C128MD2-25BCNTR datasheetAS4C128MD2-25BCNTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)
Description

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The AS4C128MD2-25BCNTR is a memory device used in a variety of applications, including environmental monitoring, industrial automation and electronics. It is most commonly found in computer systems, where it is used for storing and retrieving data. The AS4C128MD2-25BCNTR is an 8-bit Static RAM that can handle up to 128 million bits of data. The device can operate at clock speeds up to 25 MHz and is optimized for low power operation.

The AS4C128MD2-25BCNTR is a type of memory called Static RAM. Unlike Dynamic RAM (DRAM), these types of memory do not require an electrical refresh in order to retain data. This makes them ideal for situations where constant power is not available, or where unpredictable power outages may occur. This makes the AS4C128MD2-25BCNTR an ideal choice for many applications.

The working principle of the AS4C128MD2-25BCNTR relies on the use of six transistors per cell. When the device is powered up, a refresh operation is triggered to ensure all data stored in the memory is valid before any data operations is begun. The refresh operation, which happens automatically, only requires about 12ms. After that, the device is ready for reading or writing data.

Reading data from the AS4C128MD2-25BCNTR occurs in two stages. First, the address of the desired location of the data is provided to the memory. This triggers the memory to output the information located at the specified address. The second stage is the actual output of the data. The output is available within the same clock cycle as the address selection.

Writing data to the AS4C128MD2-25BCNTR also follows two stages. First, the address and data to be written is provided to the memory. The address locates the memory location for the write operation. The second stage is the actual writing of the data. The write operation also requires the same clock cycle as the address selection. The data is written in the same clock cycle as the address.-

The AS4C128MD2-25BCNTR memory device is an ideal choice for a range of applications. It can be used in applications that are low power, where electrical refresh is not required, and require a fast data input and output from the memory. The device is very reliable and can handle up to 128 million bits of data which makes it suitable for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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