AS4C16M16D2-25BCNTR Allicdata Electronics
Allicdata Part #:

AS4C16M16D2-25BCNTR-ND

Manufacturer Part#:

AS4C16M16D2-25BCNTR

Price: $ 1.64
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 84TFBGA
More Detail: SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 4...
DataSheet: AS4C16M16D2-25BCNTR datasheetAS4C16M16D2-25BCNTR Datasheet/PDF
Quantity: 1000
2500 +: $ 1.48877
Stock 1000Can Ship Immediately
$ 1.64
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 256Mb (16M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TFBGA (12.5x8)
Description

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Memory

AS4C16M16D2-25BCNTR is a commonly used integrated circuit in memory systems. It is designed to perform various types of memory operations with very low power consumption, making it suitable for a wide range of applications.

The device is built with a 4-bit static synchronous random access memory (SRAM) cell. This SRAM system features fast random access time, low power consumption and flexibility, making it an ideal choice for a variety of applications. The device supports a wide range of access times and temperature ranges, which makes it suitable for use in many different types of systems.

The device is designed with a variety of data transfer, input/output (I/O) and control functions. It supports multiple data transfer modes, such as 8-bit and 4-bit data transfers for both read and write operations. The device also allows for a variety of I/O operations, such as multiplexing, demultiplexing, buffering and latch capabilities, in order to meet the needs of a variety of application requirements.

The device also features a variety of control registers and configuration settings. The control registers allow the user to control the operation of the device, while the configuration settings allow the user to customize the operation of the device according to the needs of the specific application.

The operating principle of the device is based on a static SRAM system. The static SRAM system is based on the charge-coupled device (CCD) principle, and it operates on the principle that the memory cells can hold and release a small amount of charge in order to store or retrieve data.

When a write operation is requested, the data from the I/O port is sent to the internal register, which stores it temporarily. The data is then transferred to the memory cell, and the memory cell stores the data until a read operation is requested. During a read operation, the data stored in the memory cell is transferred back to the internal register and then sent to the I/O port.

AS4C16M16D2-25BCNTR is a great choice for memory operations in embedded systems, as it provides low power consumption and a wide range of access times and temperature ranges. This makes it suitable for use in a variety of applications, such as embedded systems, military systems, telecommunications systems and medical systems, among others.

The specific data is subject to PDF, and the above content is for reference

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