AS4C16M16S-6BINTR

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The AS4C16M16S-6BINTR is a type of memory device used in computer systems. It is a Synchronous Burst Dual Access RAM, or Dual Data Rate Synchronous Video RAM. This type of memory is used in applications where high memory bandwidth is required, such as graphics applications.

This type of RAM is capable of running at different clock speeds, depending on the application. It can run at a variety of asynchronous clock speeds, ranging from 2MHz to 266MHz. It can also run at a synchronous clock speed of up to 400MHz. The maximum data rate achievable is 200MHz, with a maximum burst data rate of 33MHz.

The AS4C16M16S-6BINTR is designed to operate in a variety of system configurations. It is designed to work with standard common bus architectures, as well as custom bus architectures. It is also compatible with reprogrammable logic devices, such as FPGAs and complex logic devices. In addition, it can be used in embedded applications, such as PDAs and smart phones.

The AS4C16M16S-6BINTR employs several technologies to achieve the high speed and low power necessary for embedded applications. It uses Multi-Layer Interconnect technology to allow higher speed and lower latency. It also uses 0.13 micron process technology to reduce power consumption and increase performance.

One of the most important aspects of the AS4C16M16S-6BINTR is its support for error correction. It uses the Hamming algorithm to detect and correct single-bit errors. The algorithm is executed in hardware, which helps to reduce power consumption. The error correction algorithm can correct up to 4 errors per 32-bit word.

The AS4C16M16S-6BINTR is designed for applications that require high speed and low power. It is used in graphics applications for computer systems, embedded applications such as PDAs, and reprogrammable logic devices. Its error correction capabilities, its support for various bus architectures, and its Multi-Layer Interconnect technology make it well-suited to a variety of applications.

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