AS4C16M32MD1-5BINTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR
Memory Size:	512Mb (16M x 32)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	5ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	90-VFBGA
Supplier Device Package:	90-FBGA (8x13)

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<p>AS4C16M32MD1-5BINTR is a high-speed and low-power chip of a 16M synchronous DRAM (SDRAM). It is one of the most popular SDRAMs used in the current market. The chip has a rated speed of 25-100 MHz and the power consumption is lower than 5 mW.</p><p>The application field of AS4C16MD1-5BINTR chip is mainly in the field of mobile phones and other consumer electronic products, such as notebooks and embedded systems, where low-power, high-speed memory is needed. The chip\'s small size and low-power characteristics makes it suitable for these applications.</p><p>The working principle of AS4C16M32MD1-5BINTR is based on the interfacing between the memory controller and the memory system. The memory controller manages the memory traffic and allocates memory requests from different devices. It also manages the timing of operations like read/write of data from and to the memory system. The memory system consists of multiple memory chips, which can be accessed by the memory controller. The chip also supports data burst operation to improve the overall system performance.</p><p>The AS4C16M32MD1-5BINTR SDRAM is a state-of-the-art memory chip with high-speed and low-power characteristics. Its small size and low-power characteristics make it suitable for use in consumer electronic products such as mobile phones and notebooks, as well as in embedded systems. The chip\'s working principle is based on the interfacing between the memory controller and the memory system, which enables efficient data transfer between the two components.</P>

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