AS4C256M16D3B-12BIN Allicdata Electronics
Allicdata Part #:

1450-1445-ND

Manufacturer Part#:

AS4C256M16D3B-12BIN

Price: $ 7.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80...
DataSheet: AS4C256M16D3B-12BIN datasheetAS4C256M16D3B-12BIN Datasheet/PDF
Quantity: 397
1 +: $ 6.58980
10 +: $ 6.10155
25 +: $ 5.96308
50 +: $ 5.93032
180 +: $ 5.22088
360 +: $ 4.96258
540 +: $ 4.91164
1080 +: $ 4.74792
Stock 397Can Ship Immediately
$ 7.25
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C256M16D3B-12BIN is a type of memory that is used in various electronic and computer applications. It has a capacity of 256 MiB and a data transfer rate of 1333 MHz, making it a powerful and reliable medium for storing and accessing various digital data. This type of memory is used in a wide array of applications, and its working principle will be discussed in this article.

In its most general capacity, memory is any form of digital storage that can store information for later retrieval. This includes static RAM (SRAM) and dynamic RAM (DRAM), both of which are types of Random Access Memory (RAM). The AS4C256M16D3B-12BIN memory is classified as DRAM as it uses what is known as a distributed array to store data. In a typical DRAM array, each "cell" is composed of one transistor, one capacitor, and some access logic. When the capacitor is charged, the transistor is turned on, and the information is stored as a bit in that cell.

Each of these cells is then connected to an array of DRAM cells. As such, each cell can store multiple bits and this is the basis of how the AS4C256M16D3B-12BIN memory functions. As multiple cells are connected, data can be retrieved quickly and efficiently. This makes it ideal for applications such as gaming, where rapid response and high performance are essential.

When it comes to applications, the AS4C256M16D3B-12BIN memory is used primarily in mobile devices, where its high-capacity and high-density design make it a great option. It is also used in other technology such as laptops, tablets, and desktop PCs. It is also used in embedded systems such as DVRs and surveillance systems. The AS4C256M16D3B-12BIN is also commonly used in industrial applications, due to its reliability and durability.

When it comes to the working principle of the AS4C256M16D3B-12BIN, it is similar to that of other DRAM based memories. This means that the array of cells is charged, which in turn turns the transistors on and stores data. However, what makes the AS4C256M16D3B-12BIN memory different is that it is designed to operate at low-voltage levels, which helps to reduce power consumption and drastically increase its efficiency.

Another important aspect of the working principle of the AS4C256M16D3B-12BIN is its Cyclic Redundancy Check (CRC) feature. This is a type of error-detection algorithm that is designed to scan and detect any errors or incorrect data that may exist in the memory. If an error is detected, then the data is not written to the memory and the system can prompt the user to try again. This ensures that data stored on the AS4C256M16D3B-12BIN is accurate and reliable.

In conclusion, the AS4C256M16D3B-12BIN is a powerful and reliable type of memory that can be used for a variety of applications. It is primarily used for mobile devices, laptops, tablets, and desktop PCs, as well as in embedded systems and industrial applications. Its working principle is similar to other DRAM based memories, but with the addition of a CRC algorithm for error-detection. This helps to ensure the reliability and accuracy of data stored on the memory, making it an ideal solution for today\'s digital devices.

The specific data is subject to PDF, and the above content is for reference

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