AS4C256M16D3LB-12BCN Allicdata Electronics
Allicdata Part #:

1450-1395-ND

Manufacturer Part#:

AS4C256M16D3LB-12BCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 4G PARALLEL 96FBGA
More Detail: SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 8...
DataSheet: AS4C256M16D3LB-12BCN datasheetAS4C256M16D3LB-12BCN Datasheet/PDF
Quantity: 701
Stock 701Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)
Description

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The AS4C256M16D3LB-12BCN is a type of memory component used in a variety of electronic systems. It is a dynamic random-access memory (DRAM) component, which is a type of storage device that stores information in an array of cells arranged in rows and columns. The AS4C256M16D3LB-12BCN component is an 8M x 16 bit component, with a data rate of up to 400 megabytes per second (MB/s).

The primary application of the AS4C256M16D3LB-12BCN component is for use in medical imaging systems. It is used for the storage and retrieval of medical images, such as CT scans and MRI scans. The component is also used in gaming systems, and for the storage and retrieval of large data sets in engineering and scientific applications. Its high speed and low power consumption makes it an ideal component for these applications.

The working principle of the AS4C256M16D3LB-12BCN component is based on the concept of dynamic memory. This type of memory requires an external power source to refresh the cells periodically in order to maintain the stored data. The component uses an integrated circuit (IC) to refresh the memory cells, which is done by applying a small voltage to the row and column of the memory cell. The voltage will cause the electrons in the cell to rearrange and the data will be refreshed. This process is known as “refreshing” and it must be done periodically in order for the data to be maintained in the memory cells.

The AS4C256M16D3LB-12BCN component is also designed to protect data from loss or corruption due to power outages, hardware and software faults, or other causes. It employs several methods to do this, including error detection and correction, ECC, and data scrubbing. Error detection and correction is a process in which errors in the data stored in the memory cell are detected, and then the appropriate corrective action is taken. ECC (Error Correcting Code) is used to further protect the data by adding an extra layer of redundancy to the data. Finally, data scrubbing is a process in which errors in the data that were not detected by error detection and correction are identified and corrected.

In summary, the AS4C256M16D3LB-12BCN component is a dynamic random-access memory (DRAM) component that is used in medical imaging systems, gaming systems, engineering, and scientific applications. It has a data rate of up to 400 megabytes per second (MB/s) and utilizes a number of methods to protect data from loss or corruption, such as error detection and correction, ECC, and data scrubbing. With its high speed and low power consumption, the AS4C256M16D3LB-12BCN component is an ideal solution for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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