AS4C256M8D3LA-12BANTR

Series:	Automotive, AEC-Q100
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3L
Memory Size:	2Gb (256M x 8)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.283 V ~ 1.45 V
Operating Temperature:	-40°C ~ 105°C (TC)
Mounting Type:	Surface Mount
Package / Case:	78-VFBGA
Supplier Device Package:	78-FBGA (10.5x8)

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(Introduction)
AS4C256M8D3LA-12BANTR is a type of memory device that is commonly used for various applications, most notably for industrial, consumer, and automotive products. This memory device offers high performance and is also reliable, making it an ideal choice for a range of applications. In this article, we’ll discuss the application field and working principle of AS4C256M8D3LA-12BANTR.(Application field)
AS4C256M8D3LA-12BANTR is a specific type of memory device that is typically used for industrial, consumer, and automotive products. In industrial applications, this type of memory device is used for storage and access of data, including low-level control functions. For consumer applications, it is commonly used for embedded applications such as in gaming or other consumer electronic devices. In automotive applications, this type of memory device is often used for data access and storage in communication systems, navigation systems, entertainment systems, and more.(Working Principle)
The working principle of AS4C256M8D3LA-12BANTR is based on the concept of dynamic random access memory (DRAM). This type of memory device uses a specific type of cell to store data, and it can access data by sending electrical pulses to the cells. The electrical pulses cause the cells to change their state and store the data. Data is read back by sending more electrical pulses to the cells, which changes the state back to its original. The AS4C256M8D3LA-12BANTR memory device has a wide range of features and capabilities, including support for multiple types of DRAM and advanced error correction protocols. It also includes an onboard controller that handles the data access and storage functions. This controller is optimized for high-speed data transfer, allowing it to achieve faster speeds than other types of DRAMs. Additionally, AS4C256M8D3LA-12BANTR is designed to be power efficient, and is capable of operating at lower voltages and temperatures. This ensures that the memory device consumes less power and runs cooler, making it a great choice for a range of applications.(Conclusion)
AS4C256M8D3LA-12BANTR is a type of memory device that is suitable for a range of applications. It is based on DRAM technology, and features an onboard controller for fast data transfer and advanced error correction protocols. It is also designed to be power efficient and is capable of operating at lower voltages and temperatures. With these features, AS4C256M8D3LA-12BANTR is an ideal choice for industrial, consumer, and automotive products.

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