AS4C2M32S-6TINTR Allicdata Electronics
Allicdata Part #:

AS4C2M32S-6TINTR-ND

Manufacturer Part#:

AS4C2M32S-6TINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5...
DataSheet: AS4C2M32S-6TINTR datasheetAS4C2M32S-6TINTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C2M32S-6TINTR is a dynamic random access memory (DRAM) from Alliance Memory, a leading provider of dynamic memory solutions. The AS4C2M32S-6TINTR integrates 512Mbits of 1024Kx32 organizations into a single monolithic device for high-bandwidth application.

Application Field

AS4C2M32S-6TINTR are widely used in the industry, especially in multimedia application and embedded applications. It is used to enhance the performance and efficiency of running operations. It can be used in audio processing equipment’s, image processing systems, set top box, flat panel displays, xDSL and cable modems, automotive infotainment systems and other mass storage applications. As a multi-tasking memory device, it is used as an input-output device between the main processor and the mass storage device.

Working Principle

AS4C2M32S-6TINTR utilizes Direct Rambus DRAM technology which runs at up to 3.2GHz. Direct Rambus technology provides a high bandwidth of up to 10.6GB/s and allows for higher power efficiency. It also uses a non-volatile Low Power SRAM, which allows for quick retrieval of data and lower power consumption. Each memory bus transfers data using a dual-channel configuration, allowing for higher performance and lower power consumption. Additionally, the device has a DDR3 interface, which supports 1.5V and 1.35V operation.

The device also has an array of features that helps to manage the memory bandwith. This includes the support for programmable timings, temperature monitoring, refresh rates, and EDGE Reductions. Additionally, the device features Multi-Bank Refresh capability which reduces power consumption by allowing banks of memory cells to be refreshed separately rather than all at once. This reduces the overall power consumption of the device and increases the overall efficiency.

In addition, the device includes thermal and voltage sensors that monitor the device’s temperature and voltage. This allows the device to automatically adjust its parameters in order to improve its energy efficiency. Additionally, the device utilizes an on-chip ECC (Error Correction Code) module that is used to detect and correct any errors that may occur during operation.

Overall, AS4C2M32S-6TINTR is an ideal memory solution for applications that require high-bandwidth and high-performance operations. Its features like low power SRAM and DDR3 support, programmable timing, temperature monitoring, refresh rate and EDGE Reduction help it to achieve optimum performance while maintaining its power efficiency.

The specific data is subject to PDF, and the above content is for reference

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