AS4C32M16D1-5BINTR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As its namesake implies, the AS4C32M16D1-5BINTR is a high-performance synchronous dynamic random-access memory device. It is primarily intended for use in devices such as memory cards, networking, and digital signal processors (DSPs). The AS4C32M16D1-5BINTR utilizes a "single-cycle latency" architecture and a small-footprint design. It is capable of powering higher application performance while occupying a low power footprint. Thus, this versatile device can be used in a variety of applications.

In terms of its application field, the AS4C32M16D1-5BINTR is most commonly used in memory cards, memory banks, and other high-performance memory solutions. This device can reach data speeds of up to 8 GB/s and provides up to 1 TB of random-access memory capacity. Additionally, its low power consumption ensures its use in energy-efficient systems. As such, the AS4C32M16D1-5BINTR is ideal for a wide variety of applications, such as digital TVs, laptops, gaming consoles, set-top boxes, and automotive systems.

The core of the AS4C32M16D1-5BINTR is its sophisticated and advanced working principle. Its core design is based on the well-known "single-cycle latency" architecture. This architecture is designed to deliver the maximum amount of performance while consuming the lowest power levels. At the same time, it also provides the highest amount of data speed while optimizing memory capacity.

In terms of its working principle, the AS4C32M16D1-5BINTR utilizes a four-bank architecture and a page-based dynamic random-access memory (DRAM) solution. This architecture enables the device to reach its maximum data throughput speed and ensures its use for memory operations in the most power efficient manner. Apart from this, the AS4C32M16D1-5BINTR utilizes an advanced cache protocol that enhances user experience.

In terms of its working principle, the AS4C32M16D1-5BINTR also utilizes a multi-level read latency, as well as a high data rate transmission scheme. This scheme allows for data to be transmitted in a reliable and consistent manner, regardless of the operating temperature of the device. Additionally, the device also supports data transfer parity and multiplexed data transmissions.

Apart from its working principle and application fields, the AS4C32M16D1-5BINTR also has several advanced features that further enhance its operational capabilities. These include extreme temperature sensing, low voltage sensing, and data bursting. The device also ensures high-level safety and reliability by incorporating several security features. These features include enhanced write protection, data encryption and authentication, and password protection. Additionally, the device also features a write buffer, which allows the device to temporarily store large files and data before they are written to the media.

In conclusion, the AS4C32M16D1-5BINTR is an incredibly versatile and advanced memory device. It can be used in a variety of memory solutions and applications and is capable of providing remarkable performance and functionality. Its advanced single-cycle latency architecture, as well as its multiplexed data transmissions, work to provide a reliable and power-efficient solution that can meet the needs of a variety of applications. Furthermore, its advanced features add to the device\'s robustness, making it an ideal choice for any memory-based applications. By combining all of these features, the AS4C32M16D1-5BINTR is certainly a powerful and impressive device.

The specific data is subject to PDF, and the above content is for reference