AS4C32M16D1-5TCN

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AS4C32M16D1-5TCN is a type of DDR3 SDRAM integrated circuit manufactured by Alliance Memory. This integrated circuit offers a wide range of features, which makes it extremely versatile and applicable to many different applications. In this article, we will discuss the different application fields and working principle of the AS4C32M16D1-5TCN.

Application Fields

AS4C32M16D1-5TCN is well-suited to a wide range of applications, such as automotive and mobile device markets, consumer electronics products, data center products, and various mission-critical applications. To support these applications, it has a wide operating temperature range of -40℃ up to +105℃, and a maximum operating frequency of 1066MHz. Additionally, its endurance and data retention ratings exceed the requirements of many other applications, making it suitable for a variety of applications.

AS4C32M16D1-5TCN is also the ideal choice for designers who are looking for a reliable, low-power system. This device only requires a single 1.5V supply for normal operation, and has a very low standby power of less than 60mW. This makes it suitable for low-power, portable applications.

Working Principle

The AS4C32M16D1-5TCN is a type of synchronous DRAM which operates according to the DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) protocol. This means that it can transfer data in both directions simultaneously, on both the rising and falling edges of a clock signal. This allows for higher data transfer speeds than other types of DRAM, such as asynchronous DRAM.

In the read operation, the AS4C32M16D1-5TCN begins by reading an entire row of data in to the internal buffer. Then, column address strobe (CAS) signals are sent to the device, which causes it to transfer the requested data from the internal buffer to an external address. Once the requested data is delivered, the read operation is complete.

For writing data to the device, the procedure is similar to the read operation. However, instead of being sent to an external address, the data is written to the internal buffer. The data is then written to the selected row by the CAS signals. Once the data is written, the write operation is complete.

Conclusion

The AS4C32M16D1-5TCN is a versatile, reliable DRAM integrated circuit that is suitable for a wide range of applications. Its low-power design and wide temperature range make it ideal for automotive, consumer electronics, and other mission-critical applications. Additionally, its DDR3 SDRAM protocol provides high data transfer speeds, making it a good choice for high-speed applications. All in all, the AS4C32M16D1-5TCN is an excellent choice for memory applications.

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