AS4C32M16D2-25BANTR Allicdata Electronics
Allicdata Part #:

AS4C32M16D2-25BANTR-ND

Manufacturer Part#:

AS4C32M16D2-25BANTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 84TFBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 4...
DataSheet: AS4C32M16D2-25BANTR datasheetAS4C32M16D2-25BANTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TFBGA (12.5x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C32M16D2-25BANTR is a memory device that is widely used in many applications. It is a 32 megabit DDR2 synchronous DRAM with a fast clock frequency of up to 333MHz and a speed rating of 25-nanosecond (ns). It has a nonvolatile power source, allowing it to retain data even when power is lost. It has a 32-bit multiplexed address/data bus width and an 8-bit ECC check/correct capability. It also features dynamic refresh, on-chip self refresh and automatic power-down.

The high speed and versatile memory architecture of the AS4C32M16D2-25BANTR means that it is suitable for a variety of applications. The device is commonly used in applications such as video game consoles and mobile gaming devices, graphic cards, automotive electronic systems, rapidly-changing industrial systems, and high-intensity healthcare systems. It is also used frequently in computer memory systems where performance is important.

The AS4C32M16D2-25BANTR works using a synchronous dynamic random access memory (SDRAM) architecture. In this architecture, data is stored in cells, with each cell consisting of a single transistor and a capacitor. The storage cells are organized into an array, which is accessed through a series of control signals and address buses. When memory is requested, the address bus lines are used to locate the desired data. The control signals determine the type of memory access, such as read or write.

The SDRAM is then read or written using the chip’s high-speed clock signal. The high clock frequency of the AS4C32M16D2-25BANTR makes it possible to access and manipulate data quickly and efficiently, allowing for faster system performance. It also has the ability to access multiple addresses simultaneously, a feature called “burst access”, which further increases the speed of system performance. The device also has an on-chip data strobe signal which is used to synchronize data to and from the device.

The AS4C32M16D2-25BANTR also features an auto-refresh feature, which works to ensure that the memory cells do not lose their acquired charge. There is also an on-chip power-down feature which powers-down the memory when it is not in use, reducing its overall power consumption. Both of these features help to ensure that the device operates continuously and reliably.

In conclusion, the AS4C32M16D2-25BANTR is a versatile memory device that is suitable for a variety of applications. Its high clock frequency and burst access feature allow it to access and manipulate data quickly and efficiently, and its auto-refresh and power-down features further improve its reliability and performance. It is an ideal memory device for applications with high performance requirements.

The specific data is subject to PDF, and the above content is for reference

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