AS4C32M16MD1-5BCN Allicdata Electronics
Allicdata Part #:

1450-1123-ND

Manufacturer Part#:

AS4C32M16MD1-5BCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 60FPBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Pa...
DataSheet: AS4C32M16MD1-5BCN datasheetAS4C32M16MD1-5BCN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -30°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FPBGA (8x9)
Description

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The AS4C32M16MD1-5BCN belongs to the class of silicon integrated dynamic ram memory or DRAM, specifically a synchronous DRAM, which is a type of chip that works as a temporary storage device for computers. It is used on a variety of applications, such as gaming systems, smart phones, and embedded systems. This type of memory is capable of storing large amounts of data, making it ideal for these types of applications.

The core technology used to create this type of memory is known as a four transistor type dynamic random access memory, or 4T-DRAM. This type of memory uses four transistors, each handling the needed charge for one bit of data. The four transistors control the flow of the charges that control the desired bit.

The AS4C32M16MD1-5BCN device is capable of storing up to 32 megabytes of data and is one of the smallest components available in this size. It is also designed to operate at 1.2 volts and is able to achieve speeds of up to 166MHz. This low voltage operation makes it a good choice for energy efficient applications. As an added bonus, this type of memory also offers low power consumption when compared to other types of memory.

The core operation of the AS4C32M16MD1-5BCN can be broken down into two main stages. The first stage starts when the signal from outside the chip is sent from the controller. This signal is then followed by a signal from the internal logic block. This logic block interprets the data which is then transferred to the appropriate chip in the memory array. The second stage is where the necessary data is retrieved and stored. After the data is retrieved, it is then sent back to the controller. This process is repeated until the transaction is complete.

The overall performance of this type of memory is greatly improved over standard DRAM, thanks to its multiplexed architecture and high data transfer rate. This allows the memory to be used in situations where rapid data transfers or rapid access to data is crucial, such as when playing an advanced video game or when an embedded system requires quick response time.

In summary, the AS4C32M16MD1-5BCN is a highly efficient type of memory that is suitable for many applications. Its 4T-DRAM memory architecture offers superior speed and reliability, making it a great choice for gaming systems, smart phones and other embedded systems. It also offers low power consumption and high data transfer rate, making it a great choice for energy efficient applications.

The specific data is subject to PDF, and the above content is for reference

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