AS4C32M16MS-7BCNTR Allicdata Electronics
Allicdata Part #:

AS4C32M16MS-7BCNTR-ND

Manufacturer Part#:

AS4C32M16MS-7BCNTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 54BGA
More Detail: SDRAM - Mobile SDRAM Memory IC 512Mb (32M x 16) Pa...
DataSheet: AS4C32M16MS-7BCNTR datasheetAS4C32M16MS-7BCNTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile SDRAM
Memory Size: 512Mb (32M x 16)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-BGA (9x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C32M16MS-7BCNTR belongs to the series of dynamic random access memory chips. It was developed and produced by the renowned electro-optical products manufacturer Alliance Memory. It is a 16M x32 DDR3 SO-DIMM with a data transfer rate of up to 1600Mbps.

Application field

AS4C32M16MS-7BCNTR is commonly used as a main memory in many applications including desktop PC, gaming console, embedded systems, laptops, and more. It is mainly used to provide fast and reliable storage capacity for various applications. Moreover, it is also suitable for use in industrial automation and robotic systems because of its high data transmission rate.

Working principle

AS4C32M16MS-7BCNTR is based on the DDR3 SDRAM technology. When powered on, the memory chip first starts to initialize the data by writing zeros to the whole memory array. After initialization, the memory is ready to be used. When a read or write operation is required, the synchronous DRAM (SDRAM) is used to access the data cells. When writing, a write command is sent to the SDRAM, which will then send a signal to the source of the data, usually the processor. When reading, a read command is sent to the SDRAM, which will then send a signal to the destination where the data is being written, usually the processor.

In order to perform read and write operations, the SDRAM clock is synchronized with the processor\'s clock. This synchronization process is known as clock cycle counting or CAS latency. CAS latency is divided into two stages: precharge cycle and data access cycle. The precharge cycle is when the SDRAM waits for a write or read command to be sent. The data access cycle is when the processor and SDRAM are synchronized to perform a read or write operation. Asynchronous DRAM (ADRAM) is another technology that can be used to access data cells. ADRAM does not require synchronization between the processor and SDRAM clocks, but instead uses a different form of communications.

AS4C32M16MS-7BCNTR is one of the most reliable memory chips available in the market. It offers high speed data transfer rates and low power consumption, making it an ideal choice for many applications. Additionally, it is highly compatible with the latest generation computer hardware and software, making it a great choice for users who need a reliable and cost-effective memory solution.

The specific data is subject to PDF, and the above content is for reference

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