AS4C32M8D1-5TCN Allicdata Electronics
Allicdata Part #:

1450-1325-ND

Manufacturer Part#:

AS4C32M8D1-5TCN

Price: $ 1.81
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 256Mb (32M x 8) Parallel 200...
DataSheet: AS4C32M8D1-5TCN datasheetAS4C32M8D1-5TCN Datasheet/PDF
Quantity: 1000
108 +: $ 1.64874
324 +: $ 1.64256
540 +: $ 1.58208
1080 +: $ 1.50416
Stock 1000Can Ship Immediately
$ 1.81
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (32M x 8)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C32M8D1-5TCN is a 32-Megabit Dynamic Random Access Memory (DRAM) Component from Alliance Semiconductor, one of the top-tier semiconductor companies in the world. It is a high-performance, cost-effective and low-power memory that is widely used in a variety of applications ranging from automotive, consumer and computing systems to medical and industrial electronics. This article will discuss the application field of the AS4C32M8D1-5TCN, as well as its working principle.

The AS4C32M8D1-5TCN DRAM has a wide range of applications, including embedded systems, computer systems, graphics applications and automotive applications. It is also widely used as a storage device in mobile phones and other handheld devices, as well as in gaming systems, digital cameras, and network routers. As a 32-Megabit DRAM, the AS4C32M8D1-5TCN can provide up to 4 million words of dynamic random access memory (DRAM), making it an excellent choice for applications that demand large memory sizes. In addition, its low power consumption and superior performance are ideal for applications that require high energy efficiency.

The AS4C32M8D1-5TCN DRAM works by utilizing the concept of dynamic random access memory (DRAM). DRAM consists of an array of capacitive elements that are used to store data in the form of electric charges. An array controller, which is controlled by the system, is responsible for reading and writing data to and from the DRAM cells. The controller reads the data from the array and then uses the appropriate control signals to write new data to the array. The AS4C32M8D1-5TCN DRAM uses advanced process technologies to achieve high performance and low power consumption.

The AS4C32M8D1-5TCN DRAM is an excellent choice for a variety of memory applications, thanks to its high performance, low power consumption and cost-effectiveness. It is well suited for embedded systems, computer systems, graphics applications and automotive applications, as well as mobile phones, gaming systems, digital cameras, and network routers. Its advanced process technologies make it an ideal choice for applications that demand high performance and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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